458 citations · 1.1k across the 6 of their papers we have counts for
6 papers
Ultra-clean assembly of van der Waals heterostructures
Wendong Wang, Nicholas Clark, Matthew Hamer +24
Layer-by-layer assembly of van der Waals (vdW) heterostructures underpins new discoveries in solid state physics, material science and chemistry. Despite the successes, all current…
Interfacial ferroelectricity in marginally twisted 2D semiconductors
Astrid Weston, Eli G Castanon, Vladimir Enaldiev +19
Twisted heterostructures of two-dimensional crystals offer almost unlimited scope for the design of novel metamaterials. Here we demonstrate a room-temperature ferroelectric semico…
Band gap measurements of monolayer h-BN and insights into carbon-related point defects
Ricardo Javier Peña Román, Fábio J R Costa Costa, Alberto Zobelli +10
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, build…
Atomic reconstruction in twisted bilayers of transition metal dichalcogenides
Astrid Weston, Yichao Zou, Vladimir Enaldiev +17
Van der Waals heterostructures form a massive interdisciplinary research field, fueled by the rich material science opportunities presented by layer assembly of artificial solids w…
Triplet excitation and electroluminescence from a supramolecular monolayer embedded in a boron nitride tunnel barrier
Simon A. Svatek, James Kerfoot, Alex Summerfield +7
We show that ordered monolayers of organic molecules stabilized by hydrogen bonding on the surface of exfoliated few-layer hexagonal boron nitride (hBN) flakes may be incorporated…
Van der Waals epitaxy of two-dimensional single-layer h-BN on graphite by molecular beam epitaxy: Electronic properties and band structure
Debora Pierucci, Jihene Zribi, Hugo Henck +11
We report on the controlled growth of h-BN/graphite by means of molecular beam epitaxy (MBE). X-ray photoelectron spectroscopy (XPS) suggests an interface without any reaction or i…