Single-crystal hexagonal boron nitride monolayer epitaxially grown on Cu (111) thin film across a wafer
arXiv:2105.15040 · doi:10.1038/s41586-020-2009-2
Abstract
We demonstrate single crystal growth of wafer-scale hexagonal boron nitride (hBN), an insulating atomic thin monolayer, on high-symmetry index surface plane Cu(111). The unidirectional epitaxial growth is guaranteed by large binding energy difference, ~0.23 eV, between A- and B-steps edges on Cu(111) docking with B6N7 clusters, confirmed by density functional theory calculations.
References in corpus (5)
- 2D materials and van der Waals heterostructures
- Boron nitride substrates for high-quality graphene electronics
- Van der Waals density functionals applied to solids
- Emergence of Superlattice Dirac Points in Graphene on Hexagonal Boron Nitride
- BN white graphene with `colorful' edges--the energies and morphology
Cited by in corpus (36)
- On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
- High-Throughput Computational Screening of Two-Dimensional Semiconductors
- Fabrication methods for integrating 2D materials
- Nonlinear twistoptics at symmetry-broken interfaces
- Ultra-clean assembly of van der Waals heterostructures
- Accurate prediction of the properties of materials using the CAM-B3LYP Density Functional
- Hexagonal Boron Nitride (hBN) as a Low-loss Dielectric for Superconducting Quantum Circuits and Qubits
- Deep-ultraviolet electroluminescence and photocurrent generation in graphene/hBN/graphene heterostructures
- Epitaxial Growth of Two-dimensional Insulator Monolayer Honeycomb BeO
- Dielectrics for Two-Dimensional Transition Metal Dichalcogenide Applications
- Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing
- Gate-Controlled Quantum Dots Based on Two-Dimensional Materials
- The structure of amorphous two-dimensional materials: Elemental monolayer amorphous carbon versus binary monolayer amorphous boron nitride
- Step-edge epitaxy for borophene growth on insulators
- Moiré-Driven Interfacial Thermal Transport in Twisted Transition Metal Dichalcogenides
- Predicting Berborite as Potential Deep-Ultraviolet Nonlinear Optical Crystal from First Principles
- Phase Transition of Two-Dimensional Ferroelectric and Paraelectric Ga2O3 Monolayer: A Density Functional Theory and Machine-Learning Study
- Unidirectional domain growth of hexagonal boron nitride thin films
- Growth and applications of two-dimensional single crystals
- Engineering the strain and interlayer excitons of 2D materials via lithographically engraved hexagonal boron nitride
- Application-Driven Synthesis and Characterization of Hexagonal Boron Nitride on Metal and Carbon Nanotube Substrates
- Dielectric breakdown and sub-wavelength patterning of monolayer hexagonal boron nitride using femtosecond pulses
- Step-directed Epitaxy of Uni-directional Hexagonal Boron Nitride on Vicinal Ge(110)
- Hysteresis-Free High Mobility Graphene Encapsulated in Tungsten Disulfide
- Atomically-precise synthesis and simultaneous integration of 2D transition metal dichalcogenides enabled by nano-confinement
- Hexagonal boron nitride crystal growth in the Li3BN2-BN system
- A ferromagnetic Eu-Pt surface compound grown below hexagonal boron nitride
- Monolayers Grown by Molecular Beam Epitaxy on hBN
- Nanoscale electronic transparency of wafer-scale hexagonal boron nitride
- Growth of hexagonal BN crystals by traveling-solvent floating zone
- Roadmap for Gain-Bandwidth-Product Enhanced Photodetectors
- Scalable Etch-Free Transfer of Low-Dimensional Materials from Metal Films to Diverse Substrates
- Na-intercalation compounds and Na-ion batteries
- Single photon emitters in hBN: Limitations of atomic resolution imaging and potential sources of error
- Ubiquitous Antiparallel Domains in 2D Hexagonal Boron Nitride Uncovered by Interferometric Nonlinear Optical Imaging
- High-quality hexagonal boron nitride from 2D distillation