Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing
arXiv:2109.14935 · doi:10.1002/smll.202103543
Abstract
The first report on ion transport through atomic sieves of atomically-thin 2D material is provided to solve critical limitations of electrochemical random-access memory (ECRAM) devices.