56 citations · 96 across the 4 of their papers we have counts for
5 papers
Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic Computing
Revannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi +4
The first report on ion transport through atomic sieves of atomically-thin 2D material is provided to solve critical limitations of electrochemical random-access memory (ECRAM) dev…
A CMOS-compatible morphotropic phase boundary
Alireza Kashir, Hyunsang Hwang
Morphotropic phase boundaries (MPBs) show substantial piezoelectric and dielectric responses, which have practical applications. The predicted existence of MPB in HfO2-ZrO2 solid s…
Ferroelectric and dielectric properties of Hf0.5Zr0.5O2 thin film near morphotropic phase boundary
Alireza Kashir, Hyunsang Hwang
Recently, based on the phase-field modeling, it was predicted that Hf1-xZrxO2 (HZO) exhibits the morphotropic phase boundary (MPB) in its compositional phase diagram. Here, we inve…
Large remnant polarization in a wake-up free Hf0.5Zr0.5O2 ferroelectric film
Alireza Kashir, Hyung Woo Kim, Seungyeol Oh +1
A wake-up free Hf0.5Zr0.5O2 (HZO) ferroelectric film with the highest remnant polarization (Pr) value to-date was achieved through tuning of the ozone pulse duration, the annealing…
Defect engineering for control of wake-up effect in HfO2-based ferroelectrics
Alireza Kashir, Seungyeol Oh, Hyunsang Hwang
Wake-up effect is still an obstacle in the commercialization of hafnia-based ferroelectric thin films. In this work, we investigate the effect of defects, controlled by ozone dosag…