How close can one approach the Dirac point in graphene experimentally?
arXiv:1206.3848 · doi:10.1021/nl301922d
Abstract
The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap.
References in corpus (38)
- The electronic properties of graphene
- Quantum Spin Hall Effect in Graphene
- Ultrahigh electron mobility in suspended graphene
- Boron nitride substrates for high-quality graphene electronics
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Suspended Graphene: a bridge to the Dirac point
- Micrometer-scale ballistic transport in encapsulated graphene at room temperature
- Observation of Electron-Hole Puddles in Graphene Using a Scanning Single Electron Transistor
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- Carrier transport in 2D graphene layers
- First-principles study of the interaction and charge transfer between graphene and metals
- A self-consistent theory for graphene transport
- Temperature dependent transport in suspended graphene
- Observation of the Fractional Quantum Hall Effect in Graphene
- Colloquium: The transport properties of graphene: An introduction
- Spin-orbit gap of graphene: First-principles calculations
- Quantum-limited shot noise in graphene
- Dirac cones reshaped by interaction effects in suspended graphene
- Zitterbewegung, chirality, and minimal conductivity in graphene
- Tunable metal-insulator transition in double-layer graphene heterostructures
- Limits on electron quality in suspended graphene due to flexural phonons
- Ghost excitonic insulator transition in layered graphite
- Is graphene in vacuum an insulator?
- Interaction-Driven Spectrum Reconstruction in Bilayer Graphene
- How perfect can graphene be?
- Relativistic Mott criticality in graphene
- Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point
- Random resistor network model of minimal conductivity in graphene
- Transport and elastic scattering times as probes of the nature of impurity scattering in single and bilayer graphene
- Minimum Conductivity and Evidence for Phase Transitions in Ultra-clean Bilayer Graphene
- Gap generation and semimetal-insulator phase transition in graphene
- Electron-hole puddles in the absence of charged impurities
- Effect of contact induced states on minimum conductivity in graphene
- Quantum behavior of graphene transistors near the scaling limit
- Interaction and excitonic insulating transition in graphene
- Neutrality point of graphene with coplanar charged impurities
- Electron-hole asymmetry in two-terminal graphene devices
- DC conductivity of graphene with disorder
Cited by in corpus (88)
- Van der Waals heterostructures
- Graphene Spintronics
- Cloning of Dirac fermions in graphene superlattices
- Dirac materials
- Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
- Cleaning Interfaces in Layered Materials Heterostructures
- Artificial graphene as a tunable Dirac material
- Room temperature spin Hall effect in graphene/MoS van der Waals heterostructures
- Non-local transport and the hydrodynamic shear viscosity in graphene
- Ballistic interferences in suspended graphene
- Transport in inhomogeneous quantum critical fluids and in the Dirac fluid in graphene
- Monte-Carlo study of the semimetal-insulator phase transition in monolayer graphene with realistic inter-electron interaction potential
- Nanomechanical Resonators: Toward Atomic Scale
- Insulating behavior at the neutrality point in dual-gated, single-layer graphene
- Monte-Carlo study of the electron transport properties of monolayer graphene within the tight-binding model
- Uniform doping of graphene close to the charge neutrality point by polymer-assisted spontaneous assembly of molecular dopants
- Electron-hole collision limited transport in charge-neutral bilayer graphene
- Stacking boundaries and transport in bilayer graphene
- Reliable postprocessing improvement of van der Waals heterostructures
- Monte-Carlo simulation of the tight-binding model of graphene with partially screened Coulomb interactions
- All-carbon vertical van der Waals heterostructures: Non-destructive functionalization of graphene for electronic applications
- Bielectron vortices in two-dimensional Dirac semimetals
- Surface polar optical phonon interaction induced many-body effects and hot-electron relaxation in graphene
- Density dependent electrical conductivity in suspended graphene: Approaching the Dirac point in transport
- Super-Planckian electron cooling in a van der Waals stack
- Hybrid-Monte-Carlo study of competing order in the extended fermionic Hubbard model on the hexagonal lattice
- Odd-integer quantum Hall states and giant spin susceptibility in p-type few-layer WSe2
- Graphene hot-electron light bulb: incandescence from hBN-encapsulated graphene in air
- Dynamics of electric transport in interacting Weyl semimetals
- Spin-orbit coupling assisted by flexural phonons in graphene
- Stability of Dirac Liquids with Strong Coulomb Interaction
- A Family of Finite-Temperature Electronic Phase Transitions in Graphene Multilayers
- Competition of density waves and quantum multicritical behavior in Dirac materials from functional renormalization
- Drift-induced modifications to the dynamical polarization of graphene
- Excitonic pairing and insulating transition in two-dimensional semi-Dirac semimetals
- High-quality multi-terminal suspended graphene devices
- Numerical evidence of conformal phase transition in graphene with long-range interactions
- Influence of Coulomb interaction on the anisotropic Dirac cone in graphene
- Coherent Terahertz Radiation from a Nonlinear Oscillator of Viscous Electrons
- Antiferromagnetism and competing charge instabilities of electrons in strained graphene from Coulomb interactions
- Symmetry Breaking and Lattice Kirigami
- Momentum-resolved view of highly tunable many-body effects in a graphene/hBN field-effect device
- Supercritical instability in graphene with two charged impurities
- Graphene single electron transistor as a spin sensor for magnetic adsorbates
- Lippmann-Schwinger theory for two-dimensional plasmon scattering
- Electron spin dynamics of two-dimensional layered materials
- Gate tunable quantum transport in double layer graphene
- Electron cooling with graphene-insulator-superconductor tunnel junctions and applications to fast bolometry
- Hydrodynamic charge and heat transport on inhomogeneous curved spaces
- Temperature and gate effects on contact resistance and mobility in graphene transistors by TLM and Y-function methods
- Excitonic mass gap in uniaxially strained graphene
- Impact of thermal annealing on graphene devices encapsulated in hexagonal boron nitride
- The intrinsic charge and spin conductivities of doped graphene in the Fermi-Liquid regime
- Radiation from electrons in graphene in strong electric field
- The effect of vertex corrections on the possibility of chiral symmetry breaking, induced by long-range Coulomb repulsion in graphene
- Anisotropic fixed points in Dirac and Weyl semimetals
- Gate-controlled ultraviolet photo-etching of graphene edges
- Applications of lattice QCD techniques for condensed matter systems
- Dynamical gap generation in 2D Dirac semimetal with deformed Dirac cone
- Nonperturbative Dyson-Schwinger equation approach to strongly interacting Dirac fermion systems
- Dyson-Schwinger approach to strongly coupled theories
- Interplay between nanometer-scale strain variations and externally applied strain in graphene
- Quantum capacitance of the monolayer graphene
- Milli-Tesla Quantization enabled by Tuneable Coulomb Screening in Large-Angle Twisted Graphene
- The influence of defects on the conductivity of graphene within the effective theory approach
- On the Quantum Hall Effect in graphene
- Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers
- Robustness of the semimetal state of Na3Bi and Cd3As2 against Coulomb interaction
- Non-local Andreev reflection through Andreev molecular states in graphene Josephson junctions
- Finite-size scaling in a 2D disordered electron gas with spectral nodes
- Quantum Hall Effect at 0.002T
- Theory of Conductivity of Chiral Particles
- Strong localization in a suspended monolayer graphene by intervalley scattering
- Topological Superfluid Responses of Superconducting Dirac Semimetals
- Broken symmetry states in bilayer graphene in electric and in-plane magnetic fields
- Quantum critical phenomena of the excitonic insulating transition in two dimensions
- Green functions in graphene monolayer with Coulomb interactions taken into account
- Excitonic physics in a Dirac quantum dot
- Hybrid Monte-Carlo simulation of interacting tight-binding model of graphene
- STM/S study of electronic inhomogeneity evolution with gate voltage in graphene: role of screening and charge-state of interface defects
- Inhomogeneous screening of gate electric field by interface states in graphene FETs
- Superfluid Stiffness and Josephson Quantum Capacitance: Adiabatic Approach and Topological Effects
- Competing order in the fermionic Hubbard model on the hexagonal graphene lattice
- Ultraclean suspended graphene by radiolysis of adsorbed water
- Excitonic pairing of two-dimensional Dirac fermions near the antiferromagnetic quantum critical point
- On the semimetal-insulator transition and Lifshitz transition in simulations of mono-layer graphene
- Dirac Material Graphene
- Fluctuation-induced giant magnetoresistance in charge-neutral graphene