On the Quantum Hall Effect in graphene
arXiv:1110.5778 · doi:10.1016/j.physe.2014.06.025
Abstract
Quantum Hall effect in 1,2-layer graphene is analyzed. The transverse and longitudinal resistivity are found to be universal functions of the filling factor and temperature. At fixed magnetic field mode the magneto-transport problem is resolved in the vicinity of the Dirac point.
minor changes to v1, 10 pages, 11 nice figures
References in corpus (12)
- Electric Field Effect in Atomically Thin Carbon Films
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Landau Level Splitting in Graphene in High Magnetic Fields
- The zero-energy state in graphene in a high magnetic field
- Interaction phenomena in graphene seen through quantum capacitance
- Dissipative Quantum Hall Effect in Graphene near the Dirac Point
- How close can one approach the Dirac point in graphene experimentally?
- Charge Transport and Inhomogeneity near the Charge Neutrality Point in Graphene
- Divergent resistance at the Dirac point in graphene: Evidence for a transition in a high magnetic field
- Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure
- Metal to insulator transition on the N = 0 Landau level in graphene
- Coexistence of electron and hole transport in graphene