Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers

Abstract

Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demultiplexer under the effect of drift currents. We show that, using spin- and charge-transport parameters already obtained in experiments, the spin currents can be guided in a controlled way. In particular, spin-current selectivities up to 102 can be achieved for measurements over a distance of 10μm under a moderate drift current density of 20μA/μm, meaning that the spin current in the arm that is off is only 1% of the current in the arm that is on. To illustrate the versatility of this approach, we show similar efficiencies in a device with four outputs and the possibility of multiplexer operation using spin drift. Finally, we explain how the effect can be optimized in graphene and two-dimensional semiconductors.

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Cited by in corpus (5)

• Van der Waals heterostructures for spintronics and opto-spintronics
• Two-Dimensional Spintronic Circuit Architectures on Large Scale Graphene
• Multifunctional Spin Logic Gates In Graphene Spin Circuits
• Exploring room temperature spin transport under band gap opening in bilayer graphene
• Large spin signal and spin rectification in folded-bilayer graphene