211 citations · 313 across the 4 of their papers we have counts for
8 papers
Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe
Franz Herling, C. K. Safeer, Josep Ingla-Aynés +3
The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, t…
Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature
C. K. Safeer, Josep Ingla-Aynés, Nerea Ontoso +4
Spin-orbit coupling in graphene can be enhanced by chemical functionalization, adatom decoration or proximity with a van der Waals material. As it is expected that such enhancement…
Carrier Drift Control of Spin Currents in Graphene-Based Spin-Current Demultiplexers
J. Ingla-Aynés, A A. Kaverzin, B. J. van Wees
Electrical control of spin transport is promising for achieving new device functionalities. Here we calculate the propagation of spin currents in a graphene-based spin-current demu…
Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe at room temperature
C. K. Safeer, Nerea Ontoso, Josep Ingla-Aynés +11
Efficient and versatile spin-to-charge current conversion is crucial for the development of spintronic applications, which strongly rely on the ability to electrically generate and…
Room temperature spin Hall effect in graphene/MoS van der Waals heterostructures
C. K. Safeer, Josep Ingla-Aynés, Franz Herling +7
Graphene is an excellent material for long distance spin transport but allows little spin manipulation. Transition metal dichalcogenides imprint their strong spin-orbit coupling in…
Efficient spin injection into graphene through trilayer hBN tunnel barriers
Johannes Christian Leutenantsmeyer, Josep Ingla-Aynés, Mallikajurna Gurram +1
We characterize the spin injection into bilayer graphene fully encapsulated in hBN using trilayer (3L) hexagonal boron nitride (hBN) tunnel barriers. As a function of the DC bias,…