Electrical control of valley-Zeeman spin-orbit coupling-induced spin precession at room temperature

Abstract

The ultimate goal of spintronics is achieving electrically controlled coherent manipulation of the electron spin at room temperature to enable devices such as spin field-effect transistors. With conventional materials, coherent spin precession has been observed in the ballistic regime and at low temperatures only. However, the strong spin anisotropy and the valley character of the electronic states in 2D materials provide unique control knobs to manipulate spin precession. Here, by manipulating the anisotropic spin-orbit coupling in bilayer graphene by the proximity effect to WSe${}_2$, we achieve coherent spin precession in the absence of an external magnetic field, even in the diffusive regime. Remarkably, the sign of the precessing spin polarization can be tuned by a back gate voltage and by a drift current. Our realization of a spin field-effect transistor at room temperature is a cornerstone for the implementation of energy-efficient spin-based logic.

7 pages, 4 figures

References in corpus (16)

• Electric Field Effect in Atomically Thin Carbon Films
• Graphene Spintronics
• The electronic properties of bilayer graphene
• All-electric all-semiconductor spin field effect transistors
• Spin-orbit driven band inversion in bilayer graphene by van der Waals proximity effect
• Opto-Valleytronic Spin Injection in Monolayer MoS2/Few-Layer Graphene Hybrid Spin Valves
• Large Proximity-Induced Spin Lifetime Anisotropy in Transition Metal Dichalcogenide/Graphene Heterostructures
• Tunable spin-orbit coupling and symmetry-protected edge states in graphene/WS${}_2$
• Electronic spin drift in graphene field effect transistors
• Proximity effects in bilayer graphene on monolayer WSe${}_2$: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
• Twist-angle dependence of the proximity spin-orbit coupling in graphene on transition-metal dichalcogenides
• Contact induced spin relaxation in Hanle spin precession measurements
• Optospintronics in graphene via proximity coupling
• Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe${}_2$
• Spin Relaxation in Single Layer Graphene with Tunable Mobility
• Revisiting the measurement of the spin relaxation time in graphene-based devices

Cited by in corpus (34)

• Predictable gate-field control of spin in altermagnets with spin-layer coupling
• Charge-to-spin conversion in twisted graphene/WSe${}_2$ heterostructures
• Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
• Twist-angle tunable spin texture in WSe${}_2$/graphene van der Waals heterostructures
• Ballistic transport spectroscopy of spin-orbit-coupled bands in monolayer graphene on WSe${}_2$
• Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures
• Omnidirectional spin-to-charge conversion in graphene/NbSe${}_2$ van der Waals heterostructures
• Spin-orbit proximity in MoS${}_2$/bilayer graphene heterostructures
• Emergent correlated phases in rhombohedral trilayer graphene induced by proximity spin-orbit and exchange coupling
• Experimental observation of spin-split energy dispersion in high-mobility single-layer graphene/WSe2 heterostructures
• Spin Manipulation by Giant Valley-Zeeman Spin-Orbit Field in Atom-Thick WSe2
• A seamless graphene spin valve based on proximity to van der Waals magnet Cr${}_2$Ge${}_2$Te${}_6$
• Towards fully two-dimensional spintronic devices
• Swapping exchange and spin-orbit induced correlated phases in proximitized Bernal bilayer graphene
• Topological insulator spin transistor
• Robust Zeeman-type band splitting in sliding ferroelectrics
• Stabilizing the inverted phase of a WSe${}_2$/BLG/WSe${}_2$ heterostructure via hydrostatic pressure
• Proximity-induced spin-orbit coupling in phosphorene on a WSe${}_2$ monolayer
• Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
• Magnetotransport in ferromagnetic Fe${}_2$Ge semimetallic thin films
• Edge states in proximitized graphene ribbons and flakes in a perpendicular magnetic field: emergence of lone pseudohelical pairs and pure spin-current states
• Exchange-enhanced spin-orbit splitting and its density dependence for electrons in monolayer transition metal dichalcogenides
• Exploring room temperature spin transport under band gap opening in bilayer graphene
• Oblique spin injection to graphene via geometry controlled magnetic nanowires
• The emergence of interface states in graphene/transition metal dichalcogenides heterostructure with lateral interface
• Weak localization as probe of spin-orbit-induced spin-split bands in bilayer graphene proximity coupled to WSe${}_2$
• Spin polarised quantised transport via one-dimensional nanowire-graphene contacts
• Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe${}_2$
• Persistent spin texture preserved by local symmetry in graphene/WTe${}_2$ heterostructure
• Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures
• Proximity spin-orbit coupling in graphene on alloyed transition metal dichalcogenides
• Valley-Polarized Quantum Anomalous Hall Phase in Bilayer Graphene with Layer-Dependent Proximity Effects
• Gate tunable spin-charge interconversion in a graphene/ReS${}_2$ heterostructure up to room temperature
• Tight-binding and density-functional study of the Raman tensor in two-dimensional massive Dirac fermion systems