Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe${}_2$

Abstract

The proximity effect opens ways to transfer properties from one material into another and is especially important in two-dimensional materials. In van der Waals heterostructures, transition metal dichalcogenides (TMD) can be used to enhance the spin-orbit coupling of graphene leading to the prediction of gate controllable spin-to-charge conversion (SCC). Here, we report for the first time and quantify the SHE in graphene proximitized with WSe${}_2$ up to room temperature. Unlike in other graphene/TMD devices, the sole SCC mechanism is the spin Hall effect and no Rashba-Edelstein effect is observed. Importantly, we are able to control the SCC by applying a gate voltage. The SCC shows a high efficiency, measured with an unprecedented SCC length larger than 20 nm. These results show the capability of two-dimensional materials to advance towards the implementation of novel spin-based devices and future applications.

arXiv comment12 pages, 4 figures, 1 table, Supplementary Material

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• Charge-to-spin conversion in twisted graphene/WSe${}_2$ heterostructures
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• Twist-angle tunable spin texture in WSe${}_2$/graphene van der Waals heterostructures
• Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr${}_2$Ge${}_2$Te${}_6$
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• Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures
• Omnidirectional spin-to-charge conversion in graphene/NbSe${}_2$ van der Waals heterostructures
• Bilayer graphene encapsulated within monolayers of WS${}_2$ or Cr${}_2$Ge${}_2$Te${}_6$: Tunable proximity spin-orbit or exchange coupling
• Manipulation of Spin Transport in Graphene/Transition Metal Dichalcogenide Heterobilayers upon Twisting
• Proximity spin-orbit and exchange coupling in ABA and ABC trilayer graphene van der Waals heterostructures
• Low-symmetry topological materials for large charge-to-spin interconversion: The case of transition metal dichalcogenide monolayers
• Emergent correlated phases in rhombohedral trilayer graphene induced by proximity spin-orbit and exchange coupling
• A seamless graphene spin valve based on proximity to van der Waals magnet Cr${}_2$Ge${}_2$Te${}_6$
• Control of charge-spin interconversion in van der Waals heterostructures with chiral charge density waves
• Room-temperature anisotropic in-plane spin dynamics in graphene induced by PdSe${}_2$ proximity
• Observation of time-reversal symmetric Hall effect in graphene-WSe2 heterostructures at room temperature
• Gate-tunable spin Hall effect in an all-light-element heterostructure: graphene with copper oxide
• Swapping exchange and spin-orbit induced correlated phases in proximitized Bernal bilayer graphene
• Spin-Hall effect due to the bulk states of topological insulators: Extrinsic contribution to the conserved spin current
• Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design
• Local equilibrium charge and spin currents in two-dimensional topological systems
• Stabilizing the inverted phase of a WSe${}_2$/BLG/WSe${}_2$ heterostructure via hydrostatic pressure
• Landau levels in spin-orbit coupling proximitized graphene: bulk states
• Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
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• Room-temperature spin-lifetime anisotropy exceeding 60 in bilayer graphene spin valves proximity coupled to WSe${}_2$
• Gate tunable spin-charge interconversion in a graphene/ReS${}_2$ heterostructure up to room temperature
• Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures
• Hanle lineshapes and spin-rotation signatures from in-plane anisotropic spin relaxation in heterogeneous spin devices