Landau levels in spin-orbit coupling proximitized graphene: bulk states

Abstract

We study the magnetic-field dependence of Landau levels in graphene proximitized by large spin-orbit coupling materials, such as transition-metal dichalcogenides or topological insulators. In addition to the Rashba coupling, two types of intrinsic spin-orbit interactions, uniform (Kane-Mele type) and staggered (valley Zeeman type), are included, to resolve their interplay with magnetic orbital effects. Employing a continuum model approach, we derive analytic expressions for low-energy Landau levels, which can be used to extract local orbital and spin-orbit coupling parameters from scanning probe spectroscopy experiments. We compare different parameter regimes to identify fingerprints of relative and absolute magnitudes of intrinsic spin-orbit coupling in the spectra. The inverted band structure of graphene proximitized by WSe${}_2$ leads to an interesting crossing of Landau states across the bulk gap at a crossover field, providing insights into the size of Rashba spin-orbit coupling. Landau level spectroscopy can help to resolve the type and signs of the intrinsic spin-orbit coupling by analyzing the symmetry in energy and number of crossings in the Landau fan chart. Finally, our results suggest that the strong response to the magnetic field of Dirac electrons in proximitized graphene can be associated with extremely large self-rotating magnetic moments.

9 pages, 7 figures

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Cited by in corpus (6)

• Proximity-enhanced valley Zeeman splitting at the WS${}_2$/graphene interface
• Edge states in proximitized graphene ribbons and flakes in a perpendicular magnetic field: emergence of lone pseudohelical pairs and pure spin-current states
• Spin-orbit interactions may relax the rigid conditions leading to flat bands
• Landau-level spectrum and the effect of spin-orbit coupling in monolayer graphene on transition metal dichalcogenides
• Chiral spin channels in curved graphene $pn$ junctions
• Dirac-Rashba fermions and quantum valley Hall insulators in graphene-based 2D heterostructures