Landau levels and magnetic oscillations in gapped Dirac materials with intrinsic Rashba interaction

Abstract

A new family of the low-buckled Dirac materials which includes silicene, germanene, etc. is expected to possess a more complicated sequence of Landau levels than in pristine graphene. Their energies depend, among other factors, on the strength of the intrinsic spin-orbit (SO) and Rashba SO couplings and can be tuned by an applied electric field $E_z$. We studied the influence of the intrinsic Rashba SO term on the energies of Landau levels using both analytical and numerical methods. The quantum magnetic oscillations of the density of states are also investigated. A specific feature of the oscillations is the presence of the beats with the frequency proportional to the field $E_z$. The frequency of the beats becomes also dependent on the carrier concentration when Rashba interaction is present allowing experimental determination of its strength.

11 pages, 5 figures; final version published in PRB

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Cited by in corpus (9)

• Band inversion at critical magnetic fields in a silicene quantum dot
• Magnetic Properties of Dirac Fermions in a Buckled Honeycomb Lattice
• Tuning of Zero Energy States in Quantum Dots of Silicene and Bilayer Graphene by Electric Field
• Effects of parallel electric and magnetic fields on Rydberg excitons in buckled two-dimensional materials
• Magnetization in pristine graphene with Zeeman splitting and variable spin-orbit coupling
• Graphene-based topological insulator in the presence of a disclination submitted to a uniform magnetic field
• Protected edge states in silicene antidots and dots in magnetic field
• Landau levels in spin-orbit coupling proximitized graphene: bulk states
• Edge states in proximitized graphene ribbons and flakes in a perpendicular magnetic field: emergence of lone pseudohelical pairs and pure spin-current states