Intrinsic spin Hall effect in silicene: transition from spin Hall to normal insulator
arXiv:1211.5230 · doi:10.1002/pssr.201206202
Abstract
Intrinsic contribution to the spin Hall effect in a two-dimensional silicene is considered theoretically within the linear response theory and Green function formalism. When an external voltage normal to the silicene plane is applied, the spin Hall conductivity is shown to reveal a transition from the spin Hall insulator phase at low voltages to the conventional insulator phase at higher voltages. This transition resembles recently reported phase transition in a bilayer graphene. The spin-orbit interaction responsible for this transition in silicene is much stronger than in graphene, which should make the transition observable experimentally.
3 pages, 3 figures
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- Spin Hall effect
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- Spin effects in thermoelectric properties of Al and P doped zigzag silicene nanoribbons
- Quantization of spin Hall conductivity in two-dimensional topological insulators versus symmetry and spin-orbit interaction
- Anomalous thermospin effect in the low-buckled Dirac materials
- Landau levels and magnetic oscillations in gapped Dirac materials with intrinsic Rashba interaction
- Magnetic Properties of Dirac Fermions in a Buckled Honeycomb Lattice
- Transport through graphene-like flakes with intrinsic spin orbit interactions
- Controllable intrinsic DC spin/valley Hall conductivity in ferromagnetic silicene: Exploring a fully spin/valley polarized transport
- Low-temperature linear transport of two-dimensional massive Dirac fermions in silicene: residual conductivity and spin/valley Hall effects
- Electronic and magnetic properties of silicene monolayer under bi-axial mechanical strain: a first-principles study
- Magnetic oscillations of the anomalous Hall conductivity
- Effects of electron-impurity scattering on density of states in silicene: impurity bands and band-gap narrowing
- Detection of topological states in two-dimensional Dirac systems by the dynamic spin susceptibility