Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves
arXiv:2109.04170 · doi:10.1088/2053-1583/ac3c9b
Abstract
Understanding spin physics in graphene is crucial for developing future two-dimensional spintronic devices. Recent studies show that efficient spin-to-charge conversions via either the inverse spin Hall effect or the inverse Rashba-Edelstein effect can be achieved in graphene by proximity with an adjacent spin-orbit coupling material. Lateral spin valve devices, made up of a graphene Hall bar and ferromagnets, are best suited for such studies. Here, we report that signals mimicking the inverse Rashba-Edelstein effect can be measured in pristine graphene possessing negligible spin-orbit coupling, confirming that these signals are unrelated to spin-to-charge conversion. We identify either the anomalous Hall effect in the ferromagnet or the ordinary Hall effect in graphene induced by stray fields as the possible sources of this artefact. By quantitatively comparing these options with finite-element-method simulations, we conclude the latter better explains our results. Our study deepens the understanding of spin-to-charge conversion measurement schemes in graphene, which should be taken into account when designing future experiments.
14 pages, 5 figures, Supplementary Information
References in corpus (12)
- Electric Field Effect in Atomically Thin Carbon Films
- Van der Waals heterostructures for spintronics and opto-spintronics
- Proximity effects in bilayer graphene on monolayer WSe: Field-effect spin-valley locking, spin-orbit valve, and spin transistor
- Optimal charge-to-spin conversion in graphene on transition metal dichalcogenides
- Spin Hall effect and Weak Antilocalization in Graphene/Transition Metal Dichalcogenide Heterostructures
- Contact induced spin relaxation in Hanle spin precession measurements
- Gate tunability of highly efficient spin-to-charge conversion by spin Hall effect in graphene proximitized with WSe
- Revisiting the measurement of the spin relaxation time in graphene-based devices
- Multiple Quantum Phases in Graphene with Enhanced Spin-Orbit Coupling: From the Quantum Spin Hall Regime to the Spin Hall Effect and a Robust Metallic State
- Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
- Spin Hall Effect in Bilayer Graphene Combined with an Insulator up to Room Temperature
- Contact-induced charge contributions to non-local spin transport measurements in Co/MgO/graphene devices