Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Abstract

Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges related to the enhancement of their performance, electrical gate-tunability, interference from trivial bulk states, and heterostructure interfaces. We address these challenges by integrating two-dimensional graphene with a three-dimensional topological insulator (TI) in van der Waals heterostructures to take advantage of their remarkable spintronic properties and engineer proximity-induced spin-charge conversion phenomena. In these heterostructures, we experimentally demonstrate a gate tunable spin-galvanic effect (SGE) at room temperature, allowing for efficient conversion of a nonequilibrium spin polarization into a transverse charge current. Systematic measurements of SGE in various device geometries via a spin switch, spin precession, and magnetization rotation experiments establish the robustness of spin-charge conversion in the Gr-TI heterostructures. Importantly, using a gate voltage, we reveal a strong electric field tunability of both amplitude and sign of the spin-galvanic signal. These findings provide an efficient route for realizing all-electrical and gate-tunable spin-orbit technology using TIs and graphene in heterostructures, which can enhance the performance and reduce power dissipation in spintronic circuits.

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Cited by in corpus (41)

• Van der Waals heterostructures for spintronics and opto-spintronics
• Electrical control of magnetism by electric field and current-induced torques
• Unconventional charge-spin conversion in Weyl-semimetal WTe2
• Large and tunable magnetoresistance in van der Waals Ferromagnet/Semiconductor junctions
• Canted Spin Texture and Quantum Spin Hall Effect in WTe2
• Twist- and gate-tunable proximity spin-orbit coupling, spin relaxation anisotropy, and charge-to-spin conversion in heterostructures of graphene and transition-metal dichalcogenides
• Engineering Proximity Exchange by Twisting: Reversal of Ferromagnetic and Emergence of Antiferromagnetic Dirac Bands in Graphene/Cr${}_2$Ge${}_2$Te${}_6$
• Proximity effects in graphene on monolayers of transition-metal phosphorus trichalcogenides MPX${}_3$
• Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures
• Strong manipulation of the valley splitting upon twisting and gating in MoSe${}_2$/CrI${}_3$ and WSe${}_2$/CrI${}_3$ van der Waals heterostructures
• Omnidirectional spin-to-charge conversion in graphene/NbSe${}_2$ van der Waals heterostructures
• Skew-scattering-induced giant antidamping spin-orbit torques: Collinear and out-of-plane Edelstein effects at two-dimensional material/ferromagnet interfaces
• A seamless graphene spin valve based on proximity to van der Waals magnet Cr${}_2$Ge${}_2$Te${}_6$
• Tunable Electronic Properties and Large Rashba Splittings Found in Few-Layer Bi${}_2$Se${}_3$/PtSe${}_2$ Van der Waals Heterostructures
• Towards fully two-dimensional spintronic devices
• Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries
• Berry curvature-induced local spin polarisation in gated graphene/WTe${}_2$ heterostructures
• All-electrical spin-to-charge conversion in sputtered Bi${}_x$Se${}_{1-x}$
• Charge to Spin Conversion in van der Waals Metal NbSe2
• Spin Hall and inverse spin galvanic effects in graphene with strong interfacial spin-orbit coupling: a quasi-classical Green's function approach
• Effect of proximity-induced spin-orbit coupling in graphene mesoscopic billiards
• Spin helices in GaAs quantum wells: Interplay of electron density, spin diffusion, and spin lifetime
• Spin supercurrent in superconductor/ferromagnet van-der-Waals heterostructures
• Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design
• Room temperature nonlocal detection of charge-spin interconversion in a topological insulator
• Rashba Effect and Raman Spectra of Tl${}_2$O/PtS${}_2$ Heterostructure
• A Unified Description of Spin Transport, Weak Antilocalization and Triplet Superconductivity in Systems with Spin-Orbit Coupling
• Signature of pressure-induced topological phase transition in ZrTe${}_5$
• Giant Valley-Polarized Spin Splittings in Magnetized Janus Pt Dichalcogenides
• Spin splitting in low-symmetry quantum wells beyond Rashba and Dresselhaus terms
• Charge-spin interconversion in graphene-based systems from density functional theory
• Rashba spin splitting based on trilayer graphene systems
• Gate-Tunable Spin-to-Charge Conversion in Topological Insulator-Magnetic Insulator Heterostructures at Room Temperature
• Understanding spin textures in PT-broken systems through universal symmetry-constrained rules
• Interface engineering of van der Waals heterostructures towards energy-efficient quantum devices operating at high temperatures
• Ferroelectric switching control of spin current in graphene proximitized by In${}_2$Se${}_3$
• Reliability of spin-to-charge conversion measurements in graphene-based lateral spin valves
• Moiré Folded Helical States at the Interfaces of Heterostructures
• Gate-tunable charge-spin interconversion in graphene/heavy-metal heterostructures
• Gate tunable spin-charge interconversion in a graphene/ReS${}_2$ heterostructure up to room temperature
• Geometry-Driven Charge and Spin Transport in $\beta 12$ Borophene Quantum Dots