activity
20182021
most citedRobust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries

15 citations · 29 across the 3 of their papers we have counts for

collaborators

9 papers

cond-mat.mes-hall20214 cited

Van der Waals Magnet based Spin-Valve Devices at Room Temperature

Bing Zhao, Roselle Ngaloy, Anamul Md. Hoque +3

The discovery of van der Waals (vdW) magnets opened up a new paradigm for condensed matter physics and spintronic technologies. However, the operations of active spintronic devices…

cond-mat.mes-hall202015 cited

Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries

Dmitrii Khokhriakov, Bogdan Karpiak, Anamul Md. Hoque +3

The utilization of large-area graphene grown by chemical vapour deposition (CVD) is crucial for the development of scalable spin interconnects in all-spin-based memory and logic ci…

cond-mat.mes-hall202010 cited

Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design

Bing Zhao, Anamul Md. Hoque, Dmitrii Khokhriakov +2

The efficient generation and control of spin polarization via charge-spin conversion in topological semimetals are desirable for future spintronic and quantum technologies. Here, w…

cond-mat.mes-hall2019

Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature

Dmitrii Khokhriakov, Anamul Md. Hoque, Bogdan Karpiak +1

Unique electronic spin textures in topological states of matter are promising for emerging spin-orbit driven memory and logic technologies. However, there are several challenges re…

cond-mat.mes-hall2019

Unconventional charge-spin conversion in Weyl-semimetal WTe2

Bing Zhao, Bogdan Karpiak, Dmitrii Khokhriakov +6

An outstanding feature of topological quantum materials is their novel spin topology in the electronic band structures with an expected large charge-to-spin conversion efficiency.…

cond-mat.mes-hall2019

All-electrical creation and control of giant spin-galvanic effect in 1T-MoTe2/graphene heterostructures at room temperature

Anamul Md. Hoque, Dmitrii Khokhriakov, Bogdan Karpiak +1

The ability to engineer new states of matter and to control their electronic and spintronic properties by electric fields is at the heart of the modern information technology and d…