Room temperature nonlocal detection of charge-spin interconversion in a topological insulator

Abstract

Topological insulators (TIs) are emerging materials for next-generation low-power nanoelectronic and spintronic device applications. TIs possess non-trivial spin-momentum locking features in the topological surface states in addition to the spin-Hall effect (SHE), and Rashba states due to high spin-orbit coupling (SOC) properties. These phenomena are vital for observing the charge-spin conversion (CSC) processes for spin-based memory, logic and quantum technologies. Although CSC has been observed in TIs by potentiometric measurements, reliable nonlocal detection has so far been limited to cryogenic temperatures up to T = 15 K. Here, we report nonlocal detection of CSC and its inverse effect in the TI compound Bi1.5Sb0.5Te1.7Se1.3 at room temperature using a van der Waals heterostructure with a graphene spin-valve device. The lateral nonlocal device design with graphene allows observation of both spin-switch and Hanle spin precession signals for generation, injection and detection of spin currents by the TI. Detailed bias- and gate-dependent measurements in different geometries prove the robustness of the CSC effects in the TI. These findings demonstrate the possibility of using topological materials to make all-electrical room-temperature spintronic devices.

arXiv comment12 pages, 4 figures

References in corpus (44)

• Topological Insulators
• Topological insulators and superconductors
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
• Current-induced spin-orbit torques in ferromagnetic and antiferromagnetic systems
• Graphene Spintronics
• Spin Transfer Torque Generated by the Topological Insulator Bi_2Se_3
• Van der Waals heterostructures for spintronics and opto-spintronics
• A conductive topological insulator with colossal spin Hall effect for ultra-low power spin-orbit-torque switching
• Colloquium: Spintronics in graphene and other two-dimensional materials
• Room temperature spin-orbit torque switching induced by a topological insulator
• Tunneling Spin Injection into Single Layer Graphene
• Tunneling Spin Injection into Single Layer Graphene (Supplementary Information)
• Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime
• Room temperature spin Hall effect in graphene/MoS${}_2$ van der Waals heterostructures
• Photoemission Spectroscopy of Magnetic and Non-magnetic Impurities on the Surface of the Bi${}_2$Se${}_3$ Topological Insulator
• Tunable room-temperature spin galvanic and spin Hall effects in van der Waals heterostructures
• Electrical detection of the spin polarization due to charge flow in the surface state of the topological insulator Bi_1.5 Sb_0.5 Te_1.7 Se_1.3
• Room Temperature Electrical Detection of Spin Polarized Currents in Topological Insulators
• Unconventional charge-spin conversion in Weyl-semimetal WTe2
• Electrical injection and detection of spin-polarized currents in topological insulator Bi2Te2Se
• Spin-Polarized Tunneling Study on Spin-Momentum Locking in the Topological Insulators
• Large multi-directional spin-to-charge conversion in low symmetry semimetal MoTe${}_2$ at room temperature
• Observation of Spin Hall Effect in Weyl Semimetal WTe2 at Room Temperature
• Spin Proximity Effects in Graphene/Topological Insulator Heterostructures
• Gate-tunable Spin-Galvanic Effect in Graphene Topological insulator van der Waals Heterostructures at Room Temperature
• Thermoelectric spin voltage in graphene
• Control of spin-orbit torques by interface engineering in topological insulator heterostructures
• Gate-Tunable Reversible Rashba-Edelstein Effect in a Few-Layer Graphene/2H-TaS2 Heterostructure at Room Temperature
• Giant Edelstein effect in Topological-Insulator--Graphene heterostructures
• Current-induced spin polarization in topological insulator-graphene heterostructures
• Low carrier concentration crystals of the topological insulator Bi${}_{2-x}$Sb${}_x$Te${}_{3-y}$Se${}_y$: a magnetotransport study
• Large room temperature spin-to-charge conversion signals in a few-layer graphene/Pt lateral heterostructure
• Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states
• Two-Dimensional Spintronic Circuit Architectures on Large Scale Graphene
• Electrically Controlled Spin Injection from Giant Rashba Spin-Orbit Conductor BiTeBr
• Origin and evolution of surface spin current in topological insulators
• Multifunctional Spin Logic Gates In Graphene Spin Circuits
• One-dimensional ferromagnetic edge contacts to two-dimensional graphene/h-BN heterostructures
• Unconventional charge-to-spin conversions in graphene/MoTe2 van der Waals heterostructures
• Omnidirectional spin-to-charge conversion in graphene/NbSe${}_2$ van der Waals heterostructures
• Robust Spin Interconnect with Isotropic Spin Dynamics in Chemical Vapour Deposited Graphene Layers and Boundaries
• Charge to Spin Conversion in van der Waals Metal NbSe2
• Charge-spin conversion signal in WTe2 van der Waals hybrid devices with a geometrical design

Cited by in corpus (3)

• A generic model with unconventional Rashba bands and giant spin galvanic effect
• Promoted current-induced spin polarization in inversion symmetry broken topological insulator thin films
• Moiré Folded Helical States at the Interfaces of Heterostructures