Low carrier concentration crystals of the topological insulator BiSbTeSe: a magnetotransport study
arXiv:1411.2479 · doi:10.1088/1367-2630/16/12/123035
Abstract
In 3D topological insulators achieving a genuine bulk-insulating state is an important research topic. Recently, the material system (Bi,Sb)(Te,Se) (BSTS) has been proposed as a topological insulator with high resistivity and a low carrier concentration (Ren \textit{et al.} \cite{Ren2011}). Here we present a study to further refine the bulk-insulating properties of BSTS. We have synthesized BiSbTeSe single crystals with compositions around and . Resistance and Hall effect measurements show high resistivity and record low bulk carrier density for the composition BiSbTeSe. The analysis of the resistance measured for crystals with different thicknesses within a parallel resistor model shows that the surface contribution to the electrical transport amounts to 97% when the sample thickness is reduced to m. The magnetoconductance of exfoliated BSTS nanoflakes shows 2D weak antilocalization with as expected for transport dominated by topological surface states.
arXiv comment16 pages, 6 figures, accepted for publication in New Journal of Physics
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