Surface-state-dominated transport in crystals of the topological crystalline insulator In-doped PbSnTe
arXiv:1502.02696 · doi:10.1103/PhysRevB.91.195321
Abstract
Three-dimensional topological insulators and topological crystalline insulators represent new quantum states of matter, which are predicted to have insulating bulk states and spin-momentum-locked gapless surface states. Experimentally, it has proven difficult to achieve the high bulk resistivity that would allow surface states to dominate the transport properties over a substantial temperature range. Here we report a series of indium-doped PbSnTe compounds that manifest huge bulk resistivities together with strong evidence of topological surface states, based on thickness-dependent transport studies and magnetoresistance measurements. For these bulk-insulating materials, the surface states determine the resistivity for temperatures approaching 30 K.
arXiv comment5 pages, 3 figures
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Cited by in corpus (11)
- Theory of interacting topological crystalline insulators
- Resonance-state-induced superconductivity at high Indium contents in In-doped SnTe
- Computation of topological phase diagram of disordered PbSnTe using the kernel polynomial method
- Indium substitution effect on the topological crystalline insulator family (PbSn)InTe: Topological and superconducting properties
- Observation of coexisting weak localization and superconducting fluctuations in strained Sn1-xInxTe thin films
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- Proximity-Induced Superconductivity in a Topological Crystalline Insulator