Why is the bulk resistivity of topological insulators so small?

Abstract

As-grown topological insulators (TIs) are typically heavily-doped $n$-type crystals. Compensation by acceptors is used to move the Fermi level to the middle of the band gap, but even then TIs have a frustratingly small bulk resistivity. We show that this small resistivity is the result of band bending by poorly screened fluctuations in the random Coulomb potential. Using numerical simulations of a completely compensated TI, we find that the bulk resistivity has an activation energy of just 0.15 times the band gap, in good agreement with experimental data. At lower temperatures activated transport crosses over to variable range hopping with a relatively large localization length.

4+ pages, 3 figures; published version

References in corpus (18)

• Topological Insulators
• Topological insulators and superconductors
• Topological Insulators in Three Dimensions
• Topological Insulators with Inversion Symmetry
• Topological Field Theory of Time-Reversal Invariant Insulators
• Topological invariants of time-reversal-invariant band structures
• Three dimensional topological invariants for time reversal invariant Hamiltonians and the three dimensional quantum spin Hall effect
• Topological origin of subgap conductance in insulating bilayer graphene
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements
• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
• Quantum interference in macroscopic crystals of non-metallic Bi${}_2$Se${}_3$
• Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime
• Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface
• High-Field Shubnikov-de Haas Oscillations in the Topological Insulator Bi${}_2$Te${}_2$Se
• Fermi level tuning and a large activation gap achieved in the topological insulator Bi_{2}Te_{2}Se by Sn doping
• Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping
• Coulomb gap in the one-particle density of states in three-dimensional systems with localized electrons

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