Low temperature Hall effect in bismuth chalcogenides thin films

Abstract

Bismuth chalcogenides are the most studied 3D topological insulators. As a rule, at low temperatures thin films of these materials demonstrate positive magnetoresistance due to weak antilocalization. Weak antilocalization should lead to resistivity decrease at low temperatures; in experiments, however, resistivity grows as temperature decreases. From transport measurements for several thin films (with various carrier density, thickness, and carrier mobility), and by using purely phenomenological approach, with no microscopic theory, we show that the low temperature growth of the resistivity is accompanied by growth of the Hall coefficient, in agreement with diffusive electron-electron interaction correction mechanism. Our data reasonably explain the low-temperature resistivity upturn.

7 pages, 5 figures

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Cited by in corpus (8)

• Magnetic and magnetotransport properties of Bi${}_2$Se${}_3$ thin films doped by Eu
• Phonon-driven ultrafast symmetry lowering in a Bi${}_2$Se${}_3$ crystal
• Effect of Sr doping on structure, morphology and transport properties of Bi${}_2$Se${}_3$ epitaxial thin films
• Bulk cyclotron resonance in the topological insulator Bi2Te3
• Thickness dependence of electron-electron interactions in topological p-n junctions
• Density of states measurements for heavy subband of holes in HgTe quantum wells
• Anomalous behavior of the $E_u^1$ infrared-active phonon mode in a Bi${}_{2-x}$Sr${}_x$Se${}_3$ crystal
• High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States