Thickness dependence of electron-electron interactions in topological p-n junctions

Abstract

Electron-electron interactions in topological p-n junctions consisting of vertically stacked topological insulators are investigated. n-type Bi2Te3 and p-type Sb2Te3 of varying relative thicknesses are deposited using molecular beam epitaxy and their electronic properties measured using low-temperature transport. The screening factor is observed to decrease with increasing sample thickness, a finding which is corroborated by semi-classical Boltzmann theory. The number of two-dimensional states determined from electron-electron interactions is larger compared to the number obtained from weak-antilocalization, in line with earlier experiments using single layers.

arXiv comment38 pages, 5 figures, 1 table

References in corpus (27)

• Topological Insulators
• Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
• Quantized Anomalous Hall Effect in Magnetic Topological Insulators
• Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
• Topological origin of subgap conductance in insulating bilayer graphene
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Band structure engineering in (Bi1-xSbx)2Te3 ternary topological insulators
• Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator Bi${}_2$Se${}_3$
• Ambipolar Field Effect in Topological Insulator Nanoplates of (BixSb1-x)2Te3
• Quantum interference in macroscopic crystals of non-metallic Bi${}_2$Se${}_3$
• Manifestation of Topological Protection in Transport Properties of Epitaxial Bi2Se3 Thin Films
• Electrically tunable surface-to-bulk coherent coupling in topological insulator thin films
• Evidence for electron-electron interaction in topological insulator thin films
• Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
• Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3
• Weak Localization and Antilocalization in Topological Insulator Thin Films with Coherent Bulk-Surface Coupling
• Weak antilocalization in topological insulator Bi${}_2$Te${}_3$ microflakes
• Finite-temperature conductivity and magnetoconductivity of topological insulators
• Realization of a vertical topological p-n junction in epitaxial $\mathrm{S}{\mathrm{b}}_2\mathrm{T}{\mathrm{e}}_3/B{\mathrm{i}}_2\mathrm{T}{\mathrm{e}}_3$ heterostructures
• Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a Bi${}_2$Se${}_3$ thin film
• Enhanced electron dephasing in three-dimensional topological insulators
• Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers
• Topological states and phase transitions in Sb${}_2$Te${}_3$-GeTe multilayers
• Interaction and disorder effects in 3D topological insulator thin films
• Low temperature Hall effect in bismuth chalcogenides thin films
• Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators
• Disentangling surface and bulk transport in topological-insulator $p$-$n$ junctions

Cited by in corpus (3)

• Interplay of Lorentz-Berry forces in position-momentum spaces for valley-dependent impurity scattering in alpha-T3 lattices
• Long-lived non-equilibrium superconductivity in a non-centrosymmetric Rashba semiconductor
• Chirality relaxation in low-temperature strongly Rashba-coupled systems