Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators
arXiv:1601.05789 · doi:10.1063/1.4941265
Abstract
We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered, good-quality crystalline nanosheets of BTS are obtained on SiO and muscovite mica. Weak-antilocalization (WAL), electron-electron interaction-driven insulating ground state and universal conductance fluctuations are observed in magnetotransport experiments on BTS devices. Temperature, thickness and magnetic field dependence of the transport data indicate the presence of two-dimensional surface states along with bulk conduction, in agreement with theoretical models. An extended-WAL model is proposed and utilized in conjunction with a two-channel conduction model to analyze the data, revealing a surface component and evidence of multiple conducting channels. A facile growth method and detailed magnetotransport results indicating BTS as an alternative topological insulator material system are presented.
To be published in Journal of Applied Physics
References in corpus (14)
- Topological Insulators with Inversion Symmetry
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
- Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Finite-temperature conductivity and magnetoconductivity of topological insulators
- Magneto-resistance up to 60 Tesla in Topological Insulator Bi2Te3 Thin Films
- Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films
- Growth of High-Mobility Bi2Te2Se Nanoplatelets on hBN Sheets by van der Waals Epitaxy
- Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons
- Evidence of surface transport and weak anti-localization in single crystal of Bi2Te2Se topological insulator
- Top gating of epitaxial (Bi_{1-x}Sb_x)2Te3 topological insulator thin films
- A Natural Topological Insulator
- Indications of the topological transport by the universal conductance fluctuations in the Bi2Te2Se microflakes
Cited by in corpus (10)
- Electron-Phonon Coupling and Quantum Correction to Topological Magnetoconductivity in Bi2GeTe4
- Low temperature Hall effect in bismuth chalcogenides thin films
- Numerical Study of Universal Conductance Fluctuation in Three-dimensional Topological Semimetals
- Transport in topological insulators with bulk-surface coupling: Interference corrections and conductance fluctuations
- Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators
- Thickness dependence of electron-electron interactions in topological p-n junctions
- Diagnosing the magnetic field-tuned symmetry nature of the topological electrons by conductance fluctuations in bulk-insulating BiSbTeSe2 devices
- Spin-charge coupled transport in van der Waals systems with random tunneling
- Tracing Dirac points of topological surface states by ferromagnetic resonance
- Fermi energy sensitive universal conductance fluctuations in anisotropic materials