activity
20132019
most citedHigh-Mobility Holes in Dual-Gated WSe Field-Effect Transistors

323 citations · 1.6k across the 18 of their papers we have counts for

collaborators

18 papers

physics.app-ph2019★ 56 cited

Visualization of Local Conductance in MoS2/WSe2 Heterostructure Transistors

Di Wu, Wei Li, Amritesh Rai +7

The vertical stacking of van der Waals (vdW) materials introduces a new degree of freedom to the research of two-dimensional (2D) systems. The interlayer coupling strongly influenc…

cond-mat.mes-hall2018★ 48 cited

Spin-Conserving Resonant Tunneling in Twist-Controlled WSe2-hBN-WSe2 Heterostructures

Kyounghwan Kim, Nitin Prasad, Hema C. P. Movva +7

We investigate interlayer tunneling in heterostructures consisting of two tungsten diselenide (WSe2) monolayers with controlled rotational alignment, and separated by hexagonal bor…

cond-mat.mes-hall2018★ 106 cited

Large effective mass and interaction-enhanced Zeeman splitting of -valley electrons in MoSe

Stefano Larentis, Hema C. P. Movva, Babak Fallahazad +6

We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic…

cond-mat.mes-hall2018★ 37 cited

Tunable Valley Populations in Hole-Doped Trilayer WSe

Hema C. P. Movva, Timothy Lovorn, Babak Fallahazad +7

We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe. Shubnikovde Haas oscillations show that trilayer holes p…

cond-mat.mtrl-sci2018

Accelerated Carrier Recombination by Grain Boundary/Edge Defects in MBE Grown Transition Metal Dichalcogenides

Ke Chen, Anupam Roy, Amritesh Rai +5

Defect-carrier interaction in transition metal dichalcogenides (TMDs) play important roles in carrier relaxation dynamics and carrier transport, which determines the performance of…

cond-mat.mes-hall2017★ 8 cited

Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators

Tanuj Trivedi, Anupam Roy, Hema C. P. Movva +4

As the focus of applied research in topological insulators (TI) evolves, the need to synthesize large-area TI films for practical device applications takes center stage. However, c…

cond-mat.mes-hall2017★ 33 cited

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Tanmoy Pramanik, Anupam Roy, Rik Dey +5

We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicula…

cond-mat.mtrl-sci2017★ 20 cited

Intra-Domain Periodic Defects in Monolayer MoS

Anupam Roy, Rudresh Ghosh, Amritesh Rai +8

We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor dep…

cond-mat.mtrl-sci2017★ 9 cited

High density nonmagnetic cobalt in thin films

Nasrin Banu, Surendra Singh, Saibal Basu +3

Recently high density (HD) nonmagnetic (NM) cobalt has been discovered in a cobalt thin film, grown on Si(111). This cobalt film had a natural cobalt oxide at the top. The oxide la…

cond-mat.mes-hall2017★ 106 cited

Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe

Hema C. P. Movva, Babak Fallahazad, Kyounghwan Kim +5

We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe. The QHSs sequence transitions between predominantly even and predominantly odd f…

cond-mat.mes-hall2016★ 218 cited

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation

Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…

cond-mat.mtrl-sci2016★ 247 cited

Structural and Electrical Properties of MoTe and MoSe Grown by Molecular Beam Epitaxy

Anupam Roy, Hema C. P. Movva, Biswarup Satpati +7

We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analys…

cond-mat.mtrl-sci2016

Evidence of Formation of Superdense Nonmagnetic Cobalt

Nasrin Banu, Surendra Singh, B. Satpati +6

Magnetism of 3d transition metals at high density has always received wide interest due to existence of magnetism at the core of the Earth. For ferromagnetic cobalt, although there…

cond-mat.mes-hall2016★ 190 cited

Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe: Landau level degeneracy, effective mass, and negative compressibility

Babak Fallahazad, Hema C. P. Movva, Kyounghwan Kim +5

We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall…

cond-mat.mes-hall2016★ 19 cited

Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators

Tanuj Trivedi, Sushant Sonde, Hema C. P. Movva +1

We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered,…

cond-mat.mes-hall2015★ 323 cited

High-Mobility Holes in Dual-Gated WSe Field-Effect Transistors

Hema C. P. Movva, Amritesh Rai, Sangwoo Kang +6

We demonstrate dual-gated -type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe) using high work-function platinum source/drain contacts, and a h…

cond-mat.mes-hall2014★ 187 cited

Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures

Babak Fallahazad, Kayoung Lee, Sangwoo Kang +10

We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphen…

cond-mat.mes-hall2013★ 7 cited

Theory and synthesis of bilayer graphene intercalated with ICl and IBr for low power device applications

Priyamvada Jadaun, Hema C. P. Movva, Leonard F. Register +1

Graphene intercalation materials are potentially promising for the implementation of the ultra-low power, excitonic-condensate-based Bilayer pseudoSpin Field-Effect Transistor (BiS…