Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Abstract

We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicular anisotropy in these thin films, along with a relatively strong second order anisotropy contribution. The angular variation of the switching field observed from the magnetoresistance measurement is explained quantitatively using a one-dimensional defect model. The model reveals the relative roles of nucleation and pinning in the magnetization reversal, depending on the applied field orientation. Micromagnetic simulations are performed to visualize the domain structure and switching process.

arXiv comment14 pages, 6 figures

References in corpus (5)

• The design and verification of Mumax3
• Magnetic switching by spin torque from the spin Hall effect
• Voltage-Induced Ferromagnetic Resonance in Magnetic Tunnel Junctions
• Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films
• Efficient Energy-minimization in Finite-Difference Micromagnetics: Speeding up Hysteresis Computations

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• The effect of the surface magnetic anisotropy of the neodymium atoms on the coercivity in the neodymium permanent magnet
• Bilayer orthogonal ferromagnetism in CrTe${}_2$-based van der Waals system
• Molecular Beam Epitaxy Grown $C{r}_{2}T{e}_3$ Thin Films with Tunable Curie Temperatures