activity
20142023
most citedStructural and Electrical Properties of MoTe and MoSe Grown by Molecular Beam Epitaxy

247 citations · 651 across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mes-hall2023

Room Temperature Ferroelectricity, Ferromagnetism, and Anomalous Hall Effect in Half-metallic Monolayer CrTe

Imran Ahamed, Atasi Chakraborty, Pushpendra Yadav +4

Two-dimensional materials hosting ferroelectricity and ferromagnetism are crucial for low-power and high-speed information processing technologies. However, intrinsic 2D multiferro…

cond-mat.mtrl-sci2020★ 19 cited

Structural and Magnetic Properties of Molecular Beam Epitaxy Grown Chromium Selenide Thin Films

Anupam Roy, Rik Dey, Tanmoy Pramanik +5

Chromium selenide thin films were grown epitaxially on AlO(0001) and Si(111)-(77) substrates using molecular beam epitaxy (MBE). Sharp streaks in reflection h…

cond-mat.mes-hall2017★ 33 cited

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Tanmoy Pramanik, Anupam Roy, Rik Dey +5

We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicula…

cond-mat.mtrl-sci2017★ 20 cited

Intra-Domain Periodic Defects in Monolayer MoS

Anupam Roy, Rudresh Ghosh, Amritesh Rai +8

We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor dep…

cond-mat.mes-hall2017★ 5 cited

Detection of current induced spin polarization in epitaxial BiTe thin film

Rik Dey, Anupam Roy, Tanmoy Pramanik +5

We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown BiTe thin film in a two-terminal device with a ferromagnetic…

cond-mat.mes-hall2016★ 218 cited

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation

Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…

cond-mat.mes-hall2016★ 5 cited

Large Magnetoresistance at Room Temperature in Ferromagnet/Topological Insulator Contacts

Sarmita Majumder, Samaresh Guchhait, Rik Dey +2

We report magnetoresistance for current flow through iron/topological insulator (Fe/TI) and Fe/evaporated-oxide/TI contacts when a magnetic field is used to initially orient the ma…

cond-mat.mes-hall2016★ 3 cited

Voltage-Controlled Low-Energy Switching of Nanomagnets through Ruderman-Kittel-Kasuya-Yosida Interactions for Magnetoelectric Device Applications

Bahniman Ghosh, Rik Dey, Leonard F. Register +1

In this letter, we consider through simulation Ruderman-Kittel-Kasuya-Yosida (RKKY) interactions between nanomagnets sitting on a conductive surface, and voltage-controlled gating…

cond-mat.mtrl-sci2016★ 247 cited

Structural and Electrical Properties of MoTe and MoSe Grown by Molecular Beam Epitaxy

Anupam Roy, Hema C. P. Movva, Biswarup Satpati +7

We demonstrate the growth of thin films of molybdenum ditelluride and molybdenum diselenide on sapphire substrates by molecular beam epitaxy. In-situ structural and chemical analys…

cond-mat.mtrl-sci2015★ 101 cited

Perpendicular magnetic anisotropy and spin glass-like behavior in molecular beam epitaxy grown chromium telluride thin films

Anupam Roy, Samaresh Guchhait, Rik Dey +4

Reflection high energy electron diffraction (RHEED), scanning tunneling microscopy (STM), vibrating sample magnetometry and other physical property measurements are used to investi…

cond-mat.mes-hall2014

Voltage Controlled Magnetic Anisotropy Based Low Energy Switching of a Ferromagnet on a Topological Insulator

Bahniman Ghosh, Rik Dey, Leonard F. Register +1

We present a novel memory device that consists of a thin ferromagnetic layer of Fe deposited on topological insulator thin film, Bi2Se3. The ferromagnetic layer has perpendicular a…

cond-mat.mes-hall2014

Voltage Induced Switching of Nanomagnets in Topological Insulator Magnetoelectric Devices through Ruderman-Kittel-Kasuya-Yosida Interactions

Bahniman Ghosh, Urmimala Roy, Rik Dey +3

In this letter, we demonstrate switching of nanomagnets through RKKY interactions in topological insulator-based magnetoelectric devices. The switching speed is dependent on the si…