activity
20162018
most citedCarrier Trapping by Oxygen Impurities in Molybdenum Diselenide

57 citations · 58 across the 3 of their papers we have counts for

collaborators

6 papers

cond-mat.mtrl-sci2018

Accelerated Carrier Recombination by Grain Boundary/Edge Defects in MBE Grown Transition Metal Dichalcogenides

Ke Chen, Anupam Roy, Amritesh Rai +5

Defect-carrier interaction in transition metal dichalcogenides (TMDs) play important roles in carrier relaxation dynamics and carrier transport, which determines the performance of…

cond-mat.mtrl-sci201757 cited

Carrier Trapping by Oxygen Impurities in Molybdenum Diselenide

Ke Chen, Anupam Roy, Amritesh Rai +7

Understanding defect effect on carrier dynamics is essential for both fundamental physics and potential applications of transition metal dichalcogenides. Here, the phenomenon of ox…

physics.app-ph20171 cited

Impact of Junction Depth and Abruptness on the Activation and the Leakage Current in Germanium n/p Junctions

William Hsu, Amritesh Rai, Xiaoru Wang +3

The phosphorous activation in Ge n/p junctions is compared in terms of junction depth, by using laser spike annealing at 860°C for 400s. The reverse junction leakage is fo…

cond-mat.mes-hall2017

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Tanmoy Pramanik, Anupam Roy, Rik Dey +5

We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicula…

cond-mat.mtrl-sci2017

Intra-Domain Periodic Defects in Monolayer MoS

Anupam Roy, Rudresh Ghosh, Amritesh Rai +8

We present an ultra-high vacuum scanning tunneling microscopy (STM) study of structural defects in molybdenum disulfide thin films grown on silicon substrates by chemical vapor dep…

cond-mat.mes-hall2016

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation

Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…