23 citations · 55 across the 7 of their papers we have counts for
8 papers
Optical Visualization of Radiative Recombination at Partial Dislocations in GaAs
Todd Karin, Xiayu Linpeng, Ashish K. Rai +3
Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act…
Giant permanent dipole moment of 2D excitons bound to a single stacking fault
Todd Karin, Xiayu Linpeng, M. M. Glazov +7
We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an ex…
Confocal shift interferometry of coherent emission from trapped dipolar excitons
Jens Repp, Georg J. Schinner, Enrico Schubert +6
We introduce a confocal shift-interferometer based on optical fibers. The presented spectroscopy allows measuring coherence maps of luminescent samples with a high spatial resoluti…
Determining the stability and activation energy of Si acceptors in AlGaAs using quantum interference in an open hole quantum dot
D. J. Carrad, A. M. Burke, O. Klochan +6
We fabricated an etched hole quantum dot in a Si-doped (311)A AlGaAs/GaAs heterostructure to study disorder effects via magnetoconductance fluctuations (MCF) at millikelvin tempera…
The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
D. J. Carrad, A. M. Burke, P. J. Reece +6
We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing tha…
The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
A. M. Burke, D. Waddington, D. Carrad +9
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum…