Giant permanent dipole moment of 2D excitons bound to a single stacking fault

Abstract

We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an exciton composed of an electron and a heavy-hole, and confirm a vanishing in-plane hole $g$-factor, consistent with the atomic-scale symmetry of the system. The unprecedented homogeneity of the stacking-fault potential leads to ultra-narrow photoluminescence emission lines (with full-width at half maximum $\lesssim 80\mu \text{eV}$) and reveals a large magnetic non-reciprocity effect that originates from the magneto-Stark effect for mobile excitons. These measurements unambiguously determine the direction and magnitude of the giant electric dipole moment ($\gtrsim e\cdot 10\text{nm}$) of the stacking-fault exciton, making stacking faults a promising new platform to study interacting excitonic gases.

5 pages, 3 figures plus supplement

References in corpus (8)

• Twinning superlattices in indium phosphide nanowires
• High-temperature superfluidity with indirect excitons in van der Waals heterostructures
• Realization of a double barrier resonant tunneling diode for cavity polaritons
• Luminescence associated with stacking faults in GaN
• Particle correlations and evidence for dark state condensation in a cold dipolar exciton fluid
• Collection of indirect excitons in a diamond-shaped electrostatic trap
• Extremely low inhomogeneous broadening of exciton lines in shallow (In,Ga)As/GaAs quantum wells
• Coherence and Optical Emission from Bilayer Exciton Condensates

Cited by in corpus (5)

• Magneto-Stark and Zeeman effect as origin of second harmonic generation of excitons in Cu${}_2$O
• Anomalous magneto-optical response and chiral interface of dipolar excitons at twisted valleys
• Microscopic model of stacking-fault potential and exciton wave function in GaAs
• Tunable effective masses of magneto-excitons in two-dimensional materials
• Stacking faults from a different angle - Overcoming the edge-on limit in high-resolution defect analysis