activity
20102020
most citedAlignment of the Diamond Nitrogen Vacancy Center by Strain Engineering

33 citations · 134 across the 7 of their papers we have counts for

collaborators

8 papers

quant-ph2020★ 10 cited

Optical spin control and coherence properties of acceptor bound holes in strained GaAs

Xiayu Linpeng, Todd Karin, Mikhail V. Durnev +5

Hole spins in semiconductors are a potential qubit alternative to electron spins. In nuclear-spin-rich host crystals like GaAs, the hyperfine interaction of hole spins with nuclei…

cond-mat.mtrl-sci2016

Optical Visualization of Radiative Recombination at Partial Dislocations in GaAs

Todd Karin, Xiayu Linpeng, Ashish K. Rai +3

Individual dislocations in an ultra-pure GaAs epilayer are investigated with spatially and spectrally resolved photoluminescence imaging at 5~K. We find that some dislocations act…

cond-mat.mes-hall2016★ 33 cited

Longitudinal spin-relaxation of donor-bound electrons in direct bandgap semiconductors

Todd Karin, Xiayu Linpeng, M. V. Durnev +6

We measure the donor-bound electron longitudinal spin-relaxation time () as a function of magnetic field () in three high-purity direct-bandgap semiconductors: GaAs, InP, a…

cond-mat.mes-hall2016★ 23 cited

Giant permanent dipole moment of 2D excitons bound to a single stacking fault

Todd Karin, Xiayu Linpeng, M. M. Glazov +7

We investigate the magneto-optical properties of excitons bound to single stacking faults in high-purity GaAs. We find that the two-dimensional stacking fault potential binds an ex…

cond-mat.mes-hall2015★ 28 cited

Population pulsation resonances of excitons in monolayer MoSe2 with sub 1 μeV linewidth

John R. Schaibley, Todd Karin, Hongyi Yu +9

Monolayer transition metal dichalcogenides, a new class of atomically thin semiconductors, possess optically coupled 2D valley excitons. The nature of exciton relaxation in these s…

cond-mat.mes-hall2014★ 3 cited

Radiative properties of multi-carrier bound excitons in GaAs

Todd Karin, Russell Barbour, Charles Santori +3

Excitons in semiconductors can have multiple lifetimes due to spin dependent oscillator strengths and interference between different recombination pathways. In addition, strain and…