23 citations · 55 across the 7 of their papers we have counts for
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cond-mat.mes-hall2012★ 2 cited
The effect of (NH4)2Sx passivation on the (311)A GaAs surface and its use in AlGaAs/GaAs heterostructure devices
D. J. Carrad, A. M. Burke, P. J. Reece +6
We have studied the efficacy of (NH4)2Sx surface passivation on the (311)A GaAs surface. We report XPS studies of simultaneously-grown (311)A and (100) heterostructures showing tha…
cond-mat.mes-hall2012★ 14 cited
The origin of gate hysteresis in p-type Si-doped AlGaAs/GaAs heterostructures
A. M. Burke, D. Waddington, D. Carrad +9
Gate instability/hysteresis in modulation-doped p-type AlGaAs/GaAs heterostructures impedes the development of nanoscale hole devices, which are of interest for topics from quantum…
cond-mat.mes-hall2012★ 1 cited
Single exciton emission from gate-defined quantum dots
G. J. Schinner, J. Repp, E. Schubert +6
With gate-defined electrostatic traps fabricated on a double quantum well we are able to realize an optically active and voltage-tunable quantum dot confining individual, long-livi…