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20142020
most citedMoiré Excitons in Van der Waals Heterostructures

1.4k citations · 2.5k across the 14 of their papers we have counts for

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cond-mat.mes-hall2018★ 1.4k cited

Moiré Excitons in Van der Waals Heterostructures

Kha Tran, Galan Moody, Fengcheng Wu +19

In van der Waals (vdW) heterostructures formed by stacking two monolayer semiconductors, lattice mismatch or rotational misalignment introduces an in-plane moiré superlattice. Whil…

cond-mat.mes-hall2017★ 33 cited

Angular dependence of magnetization reversal in epitaxial chromium telluride thin films with perpendicular magnetic anisotropy

Tanmoy Pramanik, Anupam Roy, Rik Dey +5

We investigate magnetic anisotropy and magnetization reversal mechanism in chromium telluride thin films grown by molecular beam epitaxy. We report existence of strong perpendicula…

cond-mat.mes-hall2017★ 5 cited

Detection of current induced spin polarization in epitaxial BiTe thin film

Rik Dey, Anupam Roy, Tanmoy Pramanik +5

We electrically detect charge current induced spin polarization on the surface of molecular beam epitaxy grown BiTe thin film in a two-terminal device with a ferromagnetic…

cond-mat.mes-hall2016★ 218 cited

Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation

Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12

To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…

cond-mat.mes-hall2015★ 323 cited

High-Mobility Holes in Dual-Gated WSe Field-Effect Transistors

Hema C. P. Movva, Amritesh Rai, Sangwoo Kang +6

We demonstrate dual-gated -type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe) using high work-function platinum source/drain contacts, and a h…

cond-mat.mes-hall2014★ 70 cited

Theoretical and experimental investigation of vacancy-based doping of monolayer MoS on oxide

Amithraj Valsaraj, Jiwon Chang, Amritesh Rai +2

Monolayer transition metal dichalcogenides are novel, gapped two-dimensional materials. Toward device applications, we consider MoS layers on dielectrics, in particular in this…