most citedSelf-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

26 citations · 26 across the 1 of their papers we have counts for

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cond-mat.mes-hall2012★ 26 cited

Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions

Hema C. P. Movva, Michael E. Ramón, Chris M. Corbet +5

We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting…