218 citations · 264 across the 4 of their papers we have counts for
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Towards Universal Non-Volatile Resistance Switching in Non-metallic Monolayer Atomic Sheets
Ruijing Ge, Xiaohan Wu, Myungsoo Kim +5
Here, we report the intriguing observation of stable non-volatile resistance switching (NVRS) in single-layer atomic sheets sandwiched between metal electrodes. NVRS is observed in…
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer by Amorphous Encapsulation
Amritesh Rai, Amithraj Valsaraj, Hema C. P. Movva +12
To reduce Schottky-barrier-induced contact and access resistance, and the impact of charged impurity and phonon scattering on mobility in devices based on 2D transition metal dicha…
Weak Antilocalization and Universal Conductance Fluctuations in Bismuth Telluro-Sulfide Topological Insulators
Tanuj Trivedi, Sushant Sonde, Hema C. P. Movva +1
We report on van der Waals epitaxial growth, materials characterization and magnetotransport experiments in crystalline nanosheets of Bismuth Telluro-Sulfide (BTS). Highly layered,…
Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
Hema C. P. Movva, Michael E. Ramón, Chris M. Corbet +5
We report a method of fabricating self-aligned, top-gated graphene field-effect transistors (GFETs) employing polyethyleneimine spin-on-doped source/drain access regions, resulting…