Evidence of surface transport and weak anti-localization in single crystal of Bi2Te2Se topological insulator
arXiv:1406.2879 · doi:10.1103/PhysRevB.90.165140
Abstract
Topological insulators are known to their metallic surface states, a result of strong-spin-orbital coupling, that show unique surface transport phenomenon. But these surface transports are buried in presence of metallic bulk conduction. We synthesized very high quality BiTeSe single crystals by modified Bridgman method, that possess high bulk resistivity of 20~cm below 20~K, whereas the bulk is mostly inactive and surface transport dominates. Temperature dependence resistivity follows the activation law like a gap semiconductor in temperature range 20-300~K. We designed a special measurement geometry, which aims to extract the surface transport from the bulk. This special geometry is applied to measure the resistance and found that BiTeSe single crystal exhibits a cross over from bulk to surface conduction at 20~K. Simultaneously, the material also shows strong evidence of weak anti-localization in magneto-transport due to the protection against scattering by conducting surface states. This novel simple geometry is an easy route to find the evidence of surface transport in topological insulators, which are the promising materials for future spintronic applications.
6 Pages, 4 Figures
References in corpus (12)
- Quantum Spin Hall Insulator State in HgTe Quantum Wells
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Impurity effect on weak anti-localization in the topological insulator Bi2Te3
- Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator BiSe
- Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
- Observation of Dirac Holes and Electrons in a Topological Insulator
- Topological delocalization of two-dimensional massless Dirac fermions
- Tunable Surface Conductivity in Bi2Se3 Revealed in Diffusive Electron Transport
- Topological Surface States and Dirac point tuning in ternary Bi2Te2Se class of topological insulators
- Optical properties of Bi2Te2Se at ambient and high pressure
- Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons
- Optical evidence of surface state suppression in Bi based topological insulators
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- Comprehensive Analysis for the High Field Magneto-conductivity of Bi2Te3 Single Crystal
- Charge puddles in a completely compensated topological insulator
- Ultralow Thermal Conductivity and Thermoelectric Properties of Bi4GeTe7 with an Intrinsic van der Waal Heterostructure
- The Emerging Weak Antilocalization Effect in Semimetal TaNbSb Single Crystal
- Magneto-Transport and High-Resolution Angle-Resolved Photoelectron Spectroscopy Studies of Palladium Doped BiTe
- Effect of gallium doping on structural and transport properties of the topological insulator Bi2Se3 grown by molecular beam epitaxy
- Accessing topological surface states and negative MR in sculpted nanowires of Bi2Te3 at ultra-low temperature
- Observation of Dirac Charge Density Waves in BiTeSe
- Surface-dominated Conductivity of Few-layered Antimonene