Observation of multichannel quantum coherent transport and electron-electron interaction in Bi2Te3 single crystal
arXiv:1901.06674 · doi:10.1063/1.5089536
Abstract
The bulk of topological insulators is relatively unexplored due to excess contribution of conduction from native defects. Here we investigate the bulk conduction in a Bi2Te3 crystal having reduced defect induced conduction. Our results uncover the presence of three transport regimes which are dominated by thermal activation across bulk band gap, defect state charge conduction, and quantum coherent transport. The low temperature conductance and magnetoconductance reveal the presence of multichannel two dimensional quantum coherent transport in the bulk. The number of channels are of the order of quintuple layers, signifying each quintuple layer as a single transport channel. These transport channels exhibit two dimensional electron-electron interaction effect causing electron dephasing whereas the defect state bulk conduction exhibits three dimensional electron-electron interaction effect which vanishes on enhancement in defect induced charge carriers.
arXiv comment6 pages, 5 figures
References in corpus (31)
- Topological Insulators
- Topological insulators and superconductors
- Experimental Observation of the Quantum Anomalous Hall Effect in a Magnetic Topological Insulator
- Weak localisation magnetoresistance and valley symmetry in graphene
- Aharonov-Bohm interference in topological insulator nanoribbons
- Large bulk resistivity and surface quantum oscillations in the topological insulator Bi2Te2Se
- Topological origin of subgap conductance in insulating bilayer graphene
- Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
- Optimizing the Bi_(2-x)Sb_(x)Te_(3-y)Se_(y) solid solutions to approach the intrinsic topological insulator regime
- Thickness-dependent bulk properties and weak anti-localization effect in topological insulator Bi2Se3
- Crystal Structure and Chemistry of Topological Insulators
- Weak localization of bulk channels in topological insulator thin film
- Angular-dependent oscillations of the magnetoresistance in Bi_2Se_3 due to the three-dimensional bulk Fermi surface
- Quantum Hall Effect on Top and Bottom Surface States of Topological Insulator (Bi1-xSbx)2Te3 Films
- Quantum interference and Aharonov-Bohm oscillations in topological insulators
- Electronic structure and transport anisotropy of Bi2Te3 and Sb2Te3
- Weak antilocalization in topological insulator BiTe microflakes
- Finite-temperature conductivity and magnetoconductivity of topological insulators
- Extremely large non-saturating magnetoresistance and ultrahigh mobility due to topological surface states in metallic Bi2Te3 topological insulator
- Observation of Anderson localization in ultrathin films of three-dimensional topological insulators
- Two-dimensional universal conductance fluctuations and the electron-phonon interaction of topological surface states in Bi2Te2Se nanoribbons
- 2D layered transport properties from topological insulator BiSe single crystals and micro flakes
- Evidence of surface transport and weak anti-localization in single crystal of Bi2Te2Se topological insulator
- Weak antilocalization and electron-electron interaction in coupled multiple-channel transport in a BiSe thin film
- Enhanced electron dephasing in three-dimensional topological insulators
- Unusual non saturating Giant Magneto-resistance in single crystalline Bi2Te3 topological insulator
- Observation of three-dimensional Dirac semimetal state in topological insulator Bi2Se3
- Electron dephasing in homogeneous and inhomogeneous indium tin oxide thin films
- Evidence for topological surface states in metallic single crystals of Bi2Te3
- Coexistence of bulk and surface states probed by Shubnikov-de Haas oscillations in BiSe with high charge-carrier density
- Enhanced coherence and decoupled surface states in topological insulators through structural disorder