Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping

Abstract

We present a defect-engineering strategy to optimize the transport properties of the topological insulator Bi2Se3 to show a high bulk resistivity and clear quantum oscillations. Starting with a p-type Bi2Se3 obtained by combining Cd doping and a Se-rich crystal-growth condition, we were able to observe a p-to-n-type conversion upon gradually increasing the Se vacancies by post annealing. With the optimal annealing condition where a high level of compensation is achieved, the resistivity exceeds 0.5 Ohmcm at 1.8 K and we observed two-dimensional Shubnikov-de Haas oscillations composed of multiple frequencies in magnetic fields below 14 T.

7 pages, 6 figures

References in corpus (10)

• Topological Insulators with Inversion Symmetry
• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Three dimensional topological invariants for time reversal invariant Hamiltonians and the three dimensional quantum spin Hall effect
• Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
• Topological origin of subgap conductance in insulating bilayer graphene
• Coexistence of the topological state and a two-dimensional electron gas on the surface of Bi2Se3
• Bulk Fermi surface coexistence with Dirac surface state in Bi${}_2$Se${}_3$: a comparison of photoemission and Shubnikov-de Haas measurements
• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
• Observation of Dirac Holes and Electrons in a Topological Insulator
• Surface State Transport and Ambipolar Electric Field Effect in Bi2Se3 Nanodevices

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