Hot-carrier transport and spin relaxation on the surface of topological insulator
arXiv:1301.1092 · doi:10.1103/PhysRevB.87.085319
Abstract
We study the charge and spin transport under high electric field (up to several kV/cm) on the surface of topological insulator BiSe, where the electron-surface optical phonon scattering dominates except at very low temperature. Due to the spin mixing of conduction and valence bands, the electric field not only accelerates electrons in each band, but also leads to inter-band precession. In the presence of the electric field, electrons can transfer from the valence band to the conduction one via the inter-band precession and inter-band electron-phonon scattering. The electron density in each band varies with the electric field linearly when the electric field is strong. Due to the spin-momentum locking, a transverse spin polarization, with the magnitude proportional to the momentum scattering time, is induced by the electric field. The induced spin polarization depends on the electric field linearly when the latter is small. Moreover, its magnitude is inversely proportional to the temperature and is insensitive to the electron density at high temperature. Our investigation also reveals that due to the large relative static dielectric constant, the Coulomb scattering is too weak to establish a drifted Fermi distribution with a unified hot-electron temperature in the steady state under the electric field. After turning off the electric field in the steady state, the hot carriers cool down in a time scale of energy relaxation which is very long (of the order of 100-1000 ps) while the spin polarization relaxes in a time scale of momentum scattering which is quite short (of the order of 0.01-0.1 ps).
arXiv comment13 pages, 8 figures
References in corpus (41)
- Topological Insulators
- Topological insulators and superconductors
- Topological Insulators in Three Dimensions
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- Topological Field Theory of Time-Reversal Invariant Insulators
- Topological invariants of time-reversal-invariant band structures
- First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
- Dielectric function, screening, and plasmons in 2D graphene
- Model Hamiltonian for Topological Insulators
- Hexagonal Warping Effects in the Surface States of Topological Insulator BiTe
- Three-Dimensional Topological Insulators
- p-type Bi2Se3 for topological insulator and low temperature thermoelectric applications
- Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
- Topological origin of subgap conductance in insulating bilayer graphene
- Spin dynamics in semiconductors
- Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
- Surface conduction of topological Dirac electrons in bulk insulating Bi2Se3
- Spatial Fluctuations of Helical Dirac Fermions on the Surface of Topological Insulators
- Carrier Multiplication in Graphene
- Ultra-low carrier concentration and surface dominant transport in Sb-doped Bi2Se3 topological insulator nanoribbons
- Electronic Structure of the Topological Insulator Bi2Se3 Using Angle-Resolved Photoemission Spectroscopy: Evidence for a Nearly Full Surface Spin Polarization
- Spin and Charge Transport on the Surface of a Topological Insulator
- Two-dimensional surface charge transport in topological insulators
- Conductivity of the defectless Graphene
- Impact of Auger processes on carrier dynamics in graphene
- Transport in three-dimensional topological insulators: theory and experiment
- Stability of the Bi2Se3(111) topological state: electron-phonon and -defect scattering
- Interaction of Phonons and Dirac Fermions on the Surface of Bi2Se3: A Strong Kohn Anomaly
- Finite-temperature Screening and the Specific Heat of Doped Graphene Sheets
- Observations of two-dimensional quantum oscillations and ambipolar transport in the topological insulator Bi2Se3 achieved by Cd doping
- Spin-helical transport in normal and superconducting topological insulators
- Hot-electron effect in spin dephasing in -type GaAs quantum wells
- Electron-phonon scattering in topological insulators
- Spin-Charge Locking and Tunneling into a Helical Metal
- Dynamics of photoexcited carriers in graphene
- Electron spin relaxation in graphene from a microscopic approach: Role of electron-electron interaction
- Topological Insulators and Quantum Spin Liquids
- Spin relaxation under identical Dresselhaus and Rashba coupling strengths in GaAs quantum wells
- Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3
- Hot carriers in an intrinsic graphene
- Field-effect mobility enhanced by tuning the Fermi level into the band gap of Bi2Se3
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