Towards spin injection from silicon into topological insulators: Schottky barrier between Si and Bi2Se3

Abstract

A scheme is proposed to electrically measure the spin-momentum coupling in the topological insulator surface state by injection of spin polarized electrons from silicon. As a first approach, devices were fabricated consisting of thin (<100nm) exfoliated crystals of Bi2Se3 on n-type silicon with independent electrical contacts to silicon and Bi2Se3. Analysis of the temperature dependence of thermionic emission in reverse bias indicates a barrier height of 0.34 eV at the Si-Bi2Se3 interface. This robust Schottky barrier opens the possibility of novel device designs based on sub-band gap internal photoemission from Bi2Se3 into Si.

References in corpus (7)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
• Electronic measurement and control of spin transport in Silicon
• Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals
• Coherent spin transport through a 350-micron-thick Silicon wafer
• Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions
• Insulating behavior in ultra-thin bismuth selenide field effect transistors

Cited by in corpus (10)

• Topological Insulator Materials
• First-principles calculations of charge carrier mobility and conductivity in bulk semiconductors and two-dimensional materials
• Observation of inverse spin Hall effect in bismuth selenide
• Growth and band alignment of Bi2Se3 topological insulator on H-terminated Si(111) van der Waals surface
• Coherent control of optical injection of spin and currents in topological insulators
• Hot-carrier transport and spin relaxation on the surface of topological insulator
• Electron and Hole Injection via Charge Transfer at the Topological-Insulator $B{i}_{2-x}S{b}_{x}T{e}_{3-y}S{e}_y$/Organic-Molecule Interface
• Classical topological paramagnetism
• Topological Luttinger semimetallic phase accompanied with surface states realized in silicon
• An ab initio investigation of Bi${}_2$Se${}_3$ topological insulator deposited on amorphous SiO${}_2$