Electron and Hole Injection via Charge Transfer at the Topological-Insulator $B{i}_{2-x}S{b}_{x}T{e}_{3-y}S{e}_y$/Organic-Molecule Interface

Abstract

As a methodology for controlling the carrier transport of topological insulators (TI's), a flexible tuning in carrier number on the surface states (SS's) of three dimensional TI's by surface modifications using organic molecules is described. The principle of the carrier tuning and its type conversion of TI's presented in this research are based on the charge transfer of holes or electrons at the TI/organic molecule interface. By employing 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4-TCNQ) as an electron acceptor or tetracyanoquinodimethane (TCNQ) as a donor for n- and p- Bi2-xSbxTe3-ySey (BSTS) single crystals, successful carrier conversion from n to p and its reverse mode is demonstrated depending on the electron affinities of the molecules. The present method provides a nondestructive and efficient method for local tuning in carrier density of TI's, and is useful for future applications.

22 page, 3 figure

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Cited by in corpus (5)

• Two-dimensional quantum transport of multivalley (111) surface state in topological crystalline insulator SnTe thin films
• In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi${}_{2-x}$Sb${}_x$Te${}_{3-y}$Se${}_y$
• Persistent Optical Gating of a Topological Insulator
• Van der Waals epitaxial growth of topological insulator Bi${}_{2-x}$Sb${}_x$Te${}_{3-y}$Se${}_y$ ultrathin nanoplate on electrically insulating fluorophlogopite mica
• Tuning and Stabilizing Topological Insulator Bi2Se3 in the Intrinsic Regime by Charge Extraction with Organic Overlayers