Topological p-n Junction
arXiv:1202.1579 · doi:10.1103/PhysRevB.85.235131
Abstract
We consider a junction between surface -type and surface -type on an ideal topological insulator in which carrier type and density in two adjacent regions are locally controlled by composition graded doping or electrical gating. Such junction setting on topological insulators are fundamental for possible device application. A single gapless chiral edge state localized along the junction interface appears in the presence of an external magnetic field, and it can be probed by scanning tunneling microscopy and transport measurements. We propose to realize this topological \emph{p-n} junction in (BiSb)Te, which has insulating bulk properties and a tunable surface state across the Dirac cone.
4 pages, 3 figures
References in corpus (13)
- Superconducting proximity effect and Majorana fermions at the surface of a topological insulator
- Chiral tunneling and the Klein paradox in graphene
- Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
- Topological Field Theory of Time-Reversal Invariant Insulators
- Veselago Lens for Electrons: Focusing and Caustics in Graphene p-n Junctions
- Transport measurements across a tunable potential barrier in graphene
- Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
- Topological origin of subgap conductance in insulating bilayer graphene
- Two-dimensional Dirac fermions in a topological insulator: transport in the quantum limit
- Bulk Band Gap and Surface State Conduction Observed in Voltage-Tuned Crystals of the Topological Insulator BiSe
- Observation of Dirac Holes and Electrons in a Topological Insulator
- Quantized Transport in Graphene p-n Junctions in Magnetic Field
- Momentum-Resolved Landau-Level Spectroscopy of Dirac Surface State in Bi2Se3
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- Topological Surface States with Persistent High Spin Polarization across Dirac Point in BiTeSe and BiSeTe
- Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
- Two-Dimensional Inversion Asymmetric Topological Insulators in Functionalized III-Bi Bilayers
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- Intertwined Rashba, Dirac and Weyl Fermions in Hexagonal Hyperferroelectrics
- In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator BiSbTeSe
- Experimental realization of a topological p-n junction by intrinsic defect-grading
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- Engineering Topological Surface States and Giant Rashba Spin Splitting in BiTeI/BiTe Heterostructures
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- Two-Dimensional Large Gap Topological Insulators with Large Rashba Spin-Orbit Coupling in Group-IV films
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- Imaging ambipolar two-dimensional carriers induced by the spontaneous electric polarization of a polar semiconductor BiTeI
- Van der Waals epitaxial growth of topological insulator BiSbTeSe ultrathin nanoplate on electrically insulating fluorophlogopite mica
- Bulk contribution to magnetotransport properties of low defect-density BiTe topological insulator thin films
- Simultaneous Magnetic and Charge Doping of Topological Insulators with Carbon
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- Conductance oscillations in Chern insulator junctions: valley-isospin dependence and Aharonov-Bohm effects
- Klein tunneling and magnetoresistance of \textit{p-n} junctions in Weyl semimetals
- Spatial Control of Charge Doping in n-Type Topological Insulators
- Surface Step Defect in 3D Topological Insulators: Electric Manipulation of Spin and Quantum Spin Hall Effect
- Transport in Selectively Magnetically Doped Topological Insulator Wires
- Quantum transport through three-dimensional topological insulator p-n junction under magnetic field
- Selective generation and amplification of RKKY interactions by P-N interface
- Strong and Weak Three-Dimensional Topological Insulators Probed by Surface Science Methods
- Realizing a topological diode effect on the surface of a topological Kondo insulator
- Topological surface states hybridized with bulk states of Bi-doped PbSb2Te4 revealed in quasiparticle interference
- Scanning tunneling microscopy study of the possible topological surface states in BiTeCl
- Effect of Rashba spin-orbit coupling on topological phases in monolayer ZnIn2Te4