Experimental realization of a topological p-n junction by intrinsic defect-grading

Abstract

A junction between an n- and p-type semiconductor results in the creation of a depletion region whose properties are at the basis of nowadays electronics. If realized using topological insulators as constituent materials, p-n junctions are expected to manifest several unconventional effects with great potential for applications. Experimentally, all these fascinating properties remained unexplored so far, mainly because prototypical topological PNJs, which can be easily realized and investigated, were not readily available. Here, we report on the creation of topological PNJs which can be as narrow as few tenths of nm showing a built-in potential of 110meV. These junctions are intrinsically obtained by a thermodynamic control of the defects distribution across the crystal. Our results make Bi2Te3 a robust and reliable platform to explore the physics of topological p-n junction.

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Cited by in corpus (20)

• Toward the intrinsic limit of topological insulator Bi2Se3
• Systematics of electronic and magnetic properties in the transition metal doped Sb${}_2$Te${}_3$ quantum anomalous Hall platform
• In-plane Topological p-n Junction in the Three-Dimensional Topological Insulator Bi${}_{2-x}$Sb${}_x$Te${}_{3-y}$Se${}_y$
• Large-Area and Transferred High-Quality Three-Dimensional Topological Insulator Bi2-xSbxTe3-ySey Ultrathin Film by Catalyst-Free Physical Vapor Deposition
• Non-magnetic ground state of Ni adatoms on Te-terminated bismuth chalcogenide topological insulators
• Mapping the effect of defect-induced strain disorder on the Dirac states of topological insulators
• Lifetime and surface-to-bulk scattering off vacancies of the topological surface state in the three-dimensional strong topological insulators Bi2Te3 and Bi2Se3
• Conductance oscillations and zero-bias anomaly in a single superconducting junction to a three-dimensional $B{i}_{2}T{e}_3$ topological insulator
• Spatial Control of Charge Doping in n-Type Topological Insulators
• Structural Phase Transition and Carrier Density Tuning in SnSexTe1-x Nanoplates for Topological Crystalline Insulators
• Selective generation and amplification of RKKY interactions by P-N interface
• Quantum transport through three-dimensional topological insulator p-n junction under magnetic field
• Scanning tunneling spectroscopy investigations of superconducting-doped topological insulators: Experimental pitfalls and results
• Hidden quantum mirage by negative refraction in semiconductor P-N junctions
• Realizing a topological diode effect on the surface of a topological Kondo insulator
• Inhomogeneity identification by measuring magnetic quantum oscillations
• Bulk and surface electron scattering in disordered Bi${}_2$Te${}_3$ probed by quasiparticle interference
• High and Magnetic-field-dependent Surface Carriers Mobility in 3D Topological Insulators without Bulk States
• Restoration of Topological Surface State by Vacuum Annealing in Magnetically Doped Topological Insulator
• Atomically Abrupt Topological p-n Junction