Hidden quantum mirage by negative refraction in semiconductor P-N junctions
arXiv:1603.03255 · doi:10.1103/PhysRevB.94.085408
Abstract
We predict a novel quantum interference based on the negative refraction across a semiconductor P-N junction: with a local pump on one side of the junction, the response of a local probe on the other side behaves as if the disturbance emanates not from the pump but instead from its mirror image about the junction. This phenomenon is guaranteed by translational invariance of the system and matching of Fermi surfaces of the constituent materials, thus it is robust against other details of the junction (e.g., junction width, potential profile, and even disorder). The recently fabricated P-N junctions in 2D semiconductors provide ideal platforms to explore this phenomenon and its applications to dramatically enhance charge and spin transport as well as carrier-mediated long-range correlation.
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Cited by in corpus (6)
- Anomalous caustics and Veselago focusing in 8-Pmmn borophene p-n junctions with arbitrary junction directions
- Focusing RKKY interaction by graphene P-N junction
- General Green's function formalism for layered systems: Wave function approach
- Oblique and asymmetric Klein tunneling across smooth NP junctions or NPN junctions in 8-Pmmn borophene
- An Origin of Dzyaloshinskii-Moriya Interaction at Graphene-Ferromagnet Interfaces Due to the Intralayer RKKY/BR Interaction
- Selective generation and amplification of RKKY interactions by P-N interface