Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

Abstract

High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on both vicinal and non-vicinal GaAs (111) substrates were investigated by reflection high-energy electron diffraction, atomic force microscopy, x-ray diffraction, and high resolution transmission electron microscopy. It is found that non-vicinal GaAs (111) substrate is better than a vicinal substrate to provide high quality Bi2Te3 and Sb2Te3 films. Hall and magnetoresistance measurements indicate that p type Sb2Te3 and n type Bi2Te3 topological insulator films can be directly grown on a GaAs (111) substrate, which may pave a way to fabricate topological insulator p-n junction on the same substrate, compatible with the fabrication process of present semiconductor optoelectronic devices.

16 pages, 9 figure, 2 tables

References in corpus (5)

• Gate-Voltage Control of Chemical Potential and Weak Anti-localization in Bismuth Selenide
• Impurity effect on weak anti-localization in the topological insulator Bi2Te3
• Few-layer Nanoplates of Bi2Se3 and Bi2Te3 with Highly Tunable Chemical Potential
• Topological p-n Junction
• Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction

Cited by in corpus (12)

• Room-temperature ferroelectric switching of spin-to-charge conversion in GeTe
• Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
• Characterizing the Structure of Topological Insulator Thin Films
• Growth, characterization, and transport properties of ternary (Bi1-xSbx)2Te3 topological insulator layers
• Experimental realization of a topological p-n junction by intrinsic defect-grading
• Observation of Planar Hall Effect in Topological Insulator -- Bi${}_2$Te${}_3$
• Quantum Transport and Potential of Topological States for Thermoelectricity in Bi${}_2$Te${}_3$ Thin Films
• Electronic transport properties of topological insulator films and low dimensional superconductors
• Hidden quantum mirage by negative refraction in semiconductor P-N junctions
• From classical to quantum regime of topological surface states via defect engineering
• Heteroepitaxial growth of highly anisotropic $S{b}_{2}S{e}_3$ films on GaAs
• Spatiotemporal chaos in the interface growth of topological insulators