88 citations · 169 across the 4 of their papers we have counts for
4 papers
Direct Bandgap Photoluminescence of GeSn grown on Si(100) substrate by Molecular Beam Epitaxy Growth
Diandian Zhang, Nirosh M. Eldose, Dinesh Baral +9
Group IV alloys of GeSn have gained significant attention for electronic and optoelectronic applications on a Si platform due to their compatibility with existing CMOS technology,…
Electrically Injected mid-infrared GeSn laser on Si operating at 140 K
Sudip Acharya, Hryhorii Stanchu, Rajesh Kumar +6
Owing to its true direct bandgap and tunable bandgap energies,GeSn alloys are increasingly attractive as gain media for mid-IR lasers that can be monolithically integrated on Si. D…
Molecular Beam Epitaxial Growth of Bi2Te3 and Sb2Te3 Topological Insulators on GaAs (111) Substrates: A Potential Route to Fabricate Topological Insulator p-n Junction
Zhaoquan Zeng, Timothy A. Morgan, Dongsheng Fan +11
High quality Bi2Te3 and Sb2Te3 topological insulators films were epitaxially grown on GaAs (111) substrate using solid source molecular beam epitaxy. Their growth and behavior on b…
Aharonov-Bohm interference in quantum ring exciton: effects of built-in electric fields
M. D. Teodoro, V. L. Campo, V. Lopez-Richard +10
We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in…