Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator

Abstract

Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality epifilms, a two-step growth method is adopted for the van der Waal epitaxy of Bi2Se3 to proceed. By employing vicinal Si(111) substrate surfaces, the in-pane growth rate anisotropy of Bi2Se3 is explored to achieve single crystalline Bi2Se3 epifilms, in which threading defects and twins are effectively suppressed. Optimization of the growth parameters has resulted in vicinal Bi2Se3 films showing a carrier mobility of ~ 2000 cm2V-1s-1 and the background doping of ~ 3 x 1018 cm-3 of the as-grown layers. Such samples not only show relatively high magnetoresistance but also a linear dependence on magnetic field.

18 pages, 4 figures

References in corpus (5)

• Discovery (theoretical prediction and experimental observation) of a large-gap topological-insulator class with spin-polarized single-Dirac-cone on the surface
• Crossover of Three-Dimensional Topological Insulator of Bi2Se3 to the Two-Dimensional Limit
• Quantum interference in macroscopic crystals of non-metallic Bi${}_2$Se${}_3$
• Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator
• Magneto-transport Effects in Topological Insulator Bi${}_2$Se${}_3$ Nanoribbons

Cited by in corpus (45)

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• Topological Insulator Materials
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• Topological insulators for high performance terahertz to infrared applications
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• Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B
• Nonlinear planar Hall effect
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• Epitaxial Growth of 2D Layered Transition Metal Dichalcogenides
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• Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates
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• Interplay between topological insulators and superconductors
• Electron-hole pairing in topological insulator thin film
• Direct comparison of current-induced spin polarization in topological insulator Bi2Se3 and InAs Rashba states
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• Metal-Insulator Transition in Variably Doped (Bi1-xSbx)2Se3 Nanosheets
• Robust topological surface states of Bi2Se3 thin films on amorphous SiO2/Si substrate and a large ambipolar gating effect
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• From classical to quantum regime of topological surface states via defect engineering
• Bi${}_2$Se${}_3$ thin films heteroepitaxially grown on $\alpha$-RuCl${}_3$
• Spectroscopy of van der Waals nanomaterials: Opportunities and Challenges
• Bulk transport properties of Bismuth selenide thin films approaching the two-dimensional limit
• Spatiotemporal chaos in the interface growth of topological insulators