205 citations · 253 across the 2 of their papers we have counts for
2 papers
cond-mat.mes-hall2011★ 48 cited
Superlattices of Bi2Se3/In2Se3: Growth Characteristics and Structural Properties
Z. Y. Wang, X. Guo, H. D. Li +3
Superlattices (SLs) consisted of alternating Bi2Se3 and In2Se3 layers are grown on Si(111) by molecular-beam epitaxy. Bi2Se3, a three-dimensional topological insulator (TI), showed…
cond-mat.mtrl-sci2010★ 205 cited
Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator
H. D. Li, Z. Y. Wang, X. Kan +7
Epitaxial growth of topological insulator Bi2Se3 thin films on nominally flat and vicinal Si(111) substrates is studied. In order to achieve planner growth front and better quality…