Molecular beam epitaxy of high structural quality Bi2Se3 on lattice matched InP(111) substrates

Abstract

Epitaxial layers of the topological insulator Bi2Se3 have been grown by molecular beam epitaxy on laterally lattice-matched InP(111)B substrates. High resolution X-ray diffraction shows a significant improvement of Bi2Se3 crystal quality compared to layers deposited on other substrates. The measured full width at half maximum of the rocking curve is Delta omega=13 arcsec, and the (omega-2theta) scans exhibit clear layer thickness fringes. Atomic force microscope images show triangular twin domains with sizes increasing with layer thickness. The structural quality of the domains is confirmed on the microscopic level by transmission electron microscopy.

arXiv comment4 pages, 4 figures

References in corpus (5)

• First observation of Spin-Momentum Helical Locking in Bi2Se3 and Bi2Te3, demonstration of Topological-Order at 300K and a realization of topological-transport-regime
• Quintuple-layer epitaxy of high-quality Bi2Se3 thin films for topological insulator
• Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface
• Van der Waals epitaxy of Bi2Se3 on Si(111) vicinal surface: An approach to prepare high-quality thin films of topological insulator
• Coherent Heteroepitaxy of Bi2Se3 on GaAs (111)B

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