6 citations · 6 across the 1 of their papers we have counts for
2 papers
cond-mat.mes-hall2006★ 6 cited
Current Assisted Magnetization Switching in (Ga,Mn)As Nanodevices
C. Gould, K. Pappert, C. Rüster +6
Current induced magnetization switching and resistance associated with domain walls pinned in nanoconstrictions have both been previously reported in (Ga,Mn)As based devices, but u…
cond-mat.mes-hall2003
Very large magnetoresistance in lateral ferromagnetic (Ga,Mn)As wires with nanoconstrictions
C. Ruester, T. Borzenko, C. Gould +7
We have fabricated (Ga,Mn)As nanostructures in which domain walls can be pinned by sub-10 nm constrictions. Controlled by shape anisotropy, we can switch the regions on either side…