activity
19982025
most citedQuantum Spin Hall Insulator State in HgTe Quantum Wells

6.2k citations · 14.2k across the 79 of their papers we have counts for

collaborators

80 papers

cond-mat.mes-hall2025

Self-Consistent Model for Gate Control of Narrow-, Broken-, and Inverted-Gap (Topological) Heterostructures

Maximilian Hofer, Christopher Fuchs, Moritz Siebert +8

Even small electrostatic potentials can dramatically influence the band structure of narrow-, broken-, and inverted-gap materials. A quantitative understanding often necessitates a…

cond-mat.mes-hall2025★ 1 cited

Wiedemann-Franz behavior at the Weyl points in compressively strained HgTe

Abu Alex Aravindnath, Yi-Ju Ho, Fabian Schmitt +6

Weyl semimetals, with their unique electronic band structure, have drawn significant interest for their potential to explore quantum anomalies in condensed matter systems. In this…

physics.optics2024★ 1 cited

Highly efficient broadband THz upconversion with Dirac materials

Tatiana A. Uaman Svetikova, Igor Ilyakov, Alexey Ponomaryov +16

The use of the THz frequency domain in future network generations offers an unparalleled level of capacity, which can enhance innovative applications in wireless communication, ana…

cond-mat.mes-hall2024★ 11 cited

Period-doubling in the phase dynamics of a shunted HgTe quantum well Josephson junction

Wei Liu, Stanislau U. Piatrusha, Xianhu Liang +7

The fractional AC Josephson effect is a discerning property of topological superconductivity in hybrid Josephson junctions. Recent experimental observations of missing odd Shapiro…

cond-mat.mes-hall2024★ 8 cited

kdotpy: theory on a lattice for simulating semiconductor band structures

Wouter Beugeling, Florian Bayer, Christian Berger +11

The software project kdotpy provides a Python application for simulating electronic band structures of semiconductor devices with theory on a lattice. T…

cond-mat.mes-hall2024

Overlapping Top Gate Electrodes based on Low Temperature Atomic Layer Deposition for Nanoscale Ambipolar Lateral Junctions

Christopher Fuchs, Lena Fürst, Hartmut Buhmann +2

We present overlapping top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and…